The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors
Studied in this work is the Rahman-Nat diffraction on a thin grating of refractive index in semiconductor, which was created by an interference pattern of two coherent laser beams. Numeral calculations showed that the maximal diffraction efficiency for the Rahman-Nat diffraction in the first orde...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2009 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118833 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors/ O.Yu. Semchuk, О.І. Gichan, L.G. Grechko// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 343-348. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118833 |
|---|---|
| record_format |
dspace |
| spelling |
Semchuk, O.Yu. Gichan, О.І. Grechko, L.G. 2017-05-31T18:48:22Z 2017-05-31T18:48:22Z 2009 The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors/ O.Yu. Semchuk, О.І. Gichan, L.G. Grechko// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 343-348. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 75.50.D, 78.20 https://nasplib.isofts.kiev.ua/handle/123456789/118833 Studied in this work is the Rahman-Nat diffraction on a thin grating of refractive index in semiconductor, which was created by an interference pattern of two coherent laser beams. Numeral calculations showed that the maximal diffraction efficiency for the Rahman-Nat diffraction in the first order was 28.2 % for a purely phase grating at its thickness z ~ 200, and 4.8 % for a purely amplitude grating. It was also ascertained, that waves belonging to the nearby diffraction orders differ from each other by π/2 in their phase. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors |
| spellingShingle |
The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors Semchuk, O.Yu. Gichan, О.І. Grechko, L.G. |
| title_short |
The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors |
| title_full |
The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors |
| title_fullStr |
The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors |
| title_full_unstemmed |
The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors |
| title_sort |
rahman-nat diffraction on a thin laser-induced grating of the refractive index in semiconductors |
| author |
Semchuk, O.Yu. Gichan, О.І. Grechko, L.G. |
| author_facet |
Semchuk, O.Yu. Gichan, О.І. Grechko, L.G. |
| publishDate |
2009 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Studied in this work is the Rahman-Nat diffraction on a thin grating of
refractive index in semiconductor, which was created by an interference pattern of two
coherent laser beams. Numeral calculations showed that the maximal diffraction
efficiency for the Rahman-Nat diffraction in the first order was 28.2 % for a purely phase
grating at its thickness z ~ 200, and 4.8 % for a purely amplitude grating. It was also
ascertained, that waves belonging to the nearby diffraction orders differ from each other
by π/2 in their phase.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118833 |
| citation_txt |
The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors/ O.Yu. Semchuk, О.І. Gichan, L.G. Grechko// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 343-348. — Бібліогр.: 15 назв. — англ. |
| work_keys_str_mv |
AT semchukoyu therahmannatdiffractiononathinlaserinducedgratingoftherefractiveindexinsemiconductors AT gichanoí therahmannatdiffractiononathinlaserinducedgratingoftherefractiveindexinsemiconductors AT grechkolg therahmannatdiffractiononathinlaserinducedgratingoftherefractiveindexinsemiconductors AT semchukoyu rahmannatdiffractiononathinlaserinducedgratingoftherefractiveindexinsemiconductors AT gichanoí rahmannatdiffractiononathinlaserinducedgratingoftherefractiveindexinsemiconductors AT grechkolg rahmannatdiffractiononathinlaserinducedgratingoftherefractiveindexinsemiconductors |
| first_indexed |
2025-12-07T18:29:13Z |
| last_indexed |
2025-12-07T18:29:13Z |
| _version_ |
1850875212840566784 |