Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
In this work, the growth properties of Ge₁₋xSix epitaxial films grown on Ge substrates were investigated. The structural perfection of the films was controlled by electron diffraction, electron microscopic and X-ray diffraction methods. It has been established that the surface structure of the sa...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2009 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118836 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure / Sh.M. Abbasov, G.T. Aghaverdiyeva, Z.A. Ibrahimov, U.F. Farajova, R.A. Ibrahimova, Heyder Mehdevi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 357-361. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118836 |
|---|---|
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dspace |
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Abbasov, Sh.M. Aghaverdiyeva, G.T. Ibrahimov, Z.A. Farajova, U.F. Ibrahimova, R.A. Mehdevi, Heyder 2017-05-31T18:57:38Z 2017-05-31T18:57:38Z 2009 Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure / Sh.M. Abbasov, G.T. Aghaverdiyeva, Z.A. Ibrahimov, U.F. Farajova, R.A. Ibrahimova, Heyder Mehdevi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 357-361. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 42.25.Bs, 78.40.-q, 81.15.-z https://nasplib.isofts.kiev.ua/handle/123456789/118836 In this work, the growth properties of Ge₁₋xSix epitaxial films grown on Ge substrates were investigated. The structural perfection of the films was controlled by electron diffraction, electron microscopic and X-ray diffraction methods. It has been established that the surface structure of the sample Ge/Ge₁₋xSix changes after irradiation by accelerated electrons Ф = 5×1016 cm⁻², and generated are surface defects which play the role of traps for change carriers. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure |
| spellingShingle |
Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure Abbasov, Sh.M. Aghaverdiyeva, G.T. Ibrahimov, Z.A. Farajova, U.F. Ibrahimova, R.A. Mehdevi, Heyder |
| title_short |
Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure |
| title_full |
Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure |
| title_fullStr |
Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure |
| title_full_unstemmed |
Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure |
| title_sort |
influence of electron irradiation on spectra of light electroreflection from the surface of ge/ge₁₋xsix heterostructure |
| author |
Abbasov, Sh.M. Aghaverdiyeva, G.T. Ibrahimov, Z.A. Farajova, U.F. Ibrahimova, R.A. Mehdevi, Heyder |
| author_facet |
Abbasov, Sh.M. Aghaverdiyeva, G.T. Ibrahimov, Z.A. Farajova, U.F. Ibrahimova, R.A. Mehdevi, Heyder |
| publishDate |
2009 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
In this work, the growth properties of Ge₁₋xSix epitaxial films grown on Ge
substrates were investigated. The structural perfection of the films was controlled by
electron diffraction, electron microscopic and X-ray diffraction methods. It has been
established that the surface structure of the sample Ge/Ge₁₋xSix changes after irradiation by
accelerated electrons Ф = 5×1016 cm⁻², and generated are surface defects which play the
role of traps for change carriers.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118836 |
| citation_txt |
Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure / Sh.M. Abbasov, G.T. Aghaverdiyeva, Z.A. Ibrahimov, U.F. Farajova, R.A. Ibrahimova, Heyder Mehdevi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 357-361. — Бібліогр.: 13 назв. — англ. |
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