Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
In this work, the growth properties of Ge₁₋xSix epitaxial films grown on Ge
 substrates were investigated. The structural perfection of the films was controlled by
 electron diffraction, electron microscopic and X-ray diffraction methods. It has been
 established that the sur...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2009 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118836 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure / Sh.M. Abbasov, G.T. Aghaverdiyeva, Z.A. Ibrahimov, U.F. Farajova, R.A. Ibrahimova, Heyder Mehdevi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 357-361. — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862745672504049664 |
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| author | Abbasov, Sh.M. Aghaverdiyeva, G.T. Ibrahimov, Z.A. Farajova, U.F. Ibrahimova, R.A. Mehdevi, Heyder |
| author_facet | Abbasov, Sh.M. Aghaverdiyeva, G.T. Ibrahimov, Z.A. Farajova, U.F. Ibrahimova, R.A. Mehdevi, Heyder |
| citation_txt | Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure / Sh.M. Abbasov, G.T. Aghaverdiyeva, Z.A. Ibrahimov, U.F. Farajova, R.A. Ibrahimova, Heyder Mehdevi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 357-361. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this work, the growth properties of Ge₁₋xSix epitaxial films grown on Ge
substrates were investigated. The structural perfection of the films was controlled by
electron diffraction, electron microscopic and X-ray diffraction methods. It has been
established that the surface structure of the sample Ge/Ge₁₋xSix changes after irradiation by
accelerated electrons Ф = 5×1016 cm⁻², and generated are surface defects which play the
role of traps for change carriers.
|
| first_indexed | 2025-12-07T20:41:30Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118836 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:41:30Z |
| publishDate | 2009 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Abbasov, Sh.M. Aghaverdiyeva, G.T. Ibrahimov, Z.A. Farajova, U.F. Ibrahimova, R.A. Mehdevi, Heyder 2017-05-31T18:57:38Z 2017-05-31T18:57:38Z 2009 Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure / Sh.M. Abbasov, G.T. Aghaverdiyeva, Z.A. Ibrahimov, U.F. Farajova, R.A. Ibrahimova, Heyder Mehdevi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 357-361. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 42.25.Bs, 78.40.-q, 81.15.-z https://nasplib.isofts.kiev.ua/handle/123456789/118836 In this work, the growth properties of Ge₁₋xSix epitaxial films grown on Ge
 substrates were investigated. The structural perfection of the films was controlled by
 electron diffraction, electron microscopic and X-ray diffraction methods. It has been
 established that the surface structure of the sample Ge/Ge₁₋xSix changes after irradiation by
 accelerated electrons Ф = 5×1016 cm⁻², and generated are surface defects which play the
 role of traps for change carriers. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure Article published earlier |
| spellingShingle | Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure Abbasov, Sh.M. Aghaverdiyeva, G.T. Ibrahimov, Z.A. Farajova, U.F. Ibrahimova, R.A. Mehdevi, Heyder |
| title | Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure |
| title_full | Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure |
| title_fullStr | Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure |
| title_full_unstemmed | Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure |
| title_short | Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure |
| title_sort | influence of electron irradiation on spectra of light electroreflection from the surface of ge/ge₁₋xsix heterostructure |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118836 |
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