Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure

In this work, the growth properties of Ge₁₋xSix epitaxial films grown on Ge
 substrates were investigated. The structural perfection of the films was controlled by
 electron diffraction, electron microscopic and X-ray diffraction methods. It has been
 established that the sur...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2009
Hauptverfasser: Abbasov, Sh.M., Aghaverdiyeva, G.T., Ibrahimov, Z.A., Farajova, U.F., Ibrahimova, R.A., Mehdevi, Heyder
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118836
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Zitieren:Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure / Sh.M. Abbasov, G.T. Aghaverdiyeva, Z.A. Ibrahimov, U.F. Farajova, R.A. Ibrahimova, Heyder Mehdevi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 357-361. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Abbasov, Sh.M.
Aghaverdiyeva, G.T.
Ibrahimov, Z.A.
Farajova, U.F.
Ibrahimova, R.A.
Mehdevi, Heyder
author_facet Abbasov, Sh.M.
Aghaverdiyeva, G.T.
Ibrahimov, Z.A.
Farajova, U.F.
Ibrahimova, R.A.
Mehdevi, Heyder
citation_txt Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure / Sh.M. Abbasov, G.T. Aghaverdiyeva, Z.A. Ibrahimov, U.F. Farajova, R.A. Ibrahimova, Heyder Mehdevi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 357-361. — Бібліогр.: 13 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description In this work, the growth properties of Ge₁₋xSix epitaxial films grown on Ge
 substrates were investigated. The structural perfection of the films was controlled by
 electron diffraction, electron microscopic and X-ray diffraction methods. It has been
 established that the surface structure of the sample Ge/Ge₁₋xSix changes after irradiation by
 accelerated electrons Ф = 5×1016 cm⁻², and generated are surface defects which play the
 role of traps for change carriers.
first_indexed 2025-12-07T20:41:30Z
format Article
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-12-07T20:41:30Z
publishDate 2009
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Abbasov, Sh.M.
Aghaverdiyeva, G.T.
Ibrahimov, Z.A.
Farajova, U.F.
Ibrahimova, R.A.
Mehdevi, Heyder
2017-05-31T18:57:38Z
2017-05-31T18:57:38Z
2009
Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure / Sh.M. Abbasov, G.T. Aghaverdiyeva, Z.A. Ibrahimov, U.F. Farajova, R.A. Ibrahimova, Heyder Mehdevi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 357-361. — Бібліогр.: 13 назв. — англ.
1560-8034
PACS 42.25.Bs, 78.40.-q, 81.15.-z
https://nasplib.isofts.kiev.ua/handle/123456789/118836
In this work, the growth properties of Ge₁₋xSix epitaxial films grown on Ge
 substrates were investigated. The structural perfection of the films was controlled by
 electron diffraction, electron microscopic and X-ray diffraction methods. It has been
 established that the surface structure of the sample Ge/Ge₁₋xSix changes after irradiation by
 accelerated electrons Ф = 5×1016 cm⁻², and generated are surface defects which play the
 role of traps for change carriers.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
Article
published earlier
spellingShingle Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
Abbasov, Sh.M.
Aghaverdiyeva, G.T.
Ibrahimov, Z.A.
Farajova, U.F.
Ibrahimova, R.A.
Mehdevi, Heyder
title Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
title_full Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
title_fullStr Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
title_full_unstemmed Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
title_short Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
title_sort influence of electron irradiation on spectra of light electroreflection from the surface of ge/ge₁₋xsix heterostructure
url https://nasplib.isofts.kiev.ua/handle/123456789/118836
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