Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure

In this work, the growth properties of Ge₁₋xSix epitaxial films grown on Ge substrates were investigated. The structural perfection of the films was controlled by electron diffraction, electron microscopic and X-ray diffraction methods. It has been established that the surface structure of the sa...

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Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2009
Автори: Abbasov, Sh.M., Aghaverdiyeva, G.T., Ibrahimov, Z.A., Farajova, U.F., Ibrahimova, R.A., Mehdevi, Heyder
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/118836
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure / Sh.M. Abbasov, G.T. Aghaverdiyeva, Z.A. Ibrahimov, U.F. Farajova, R.A. Ibrahimova, Heyder Mehdevi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 357-361. — Бібліогр.: 13 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118836
record_format dspace
spelling Abbasov, Sh.M.
Aghaverdiyeva, G.T.
Ibrahimov, Z.A.
Farajova, U.F.
Ibrahimova, R.A.
Mehdevi, Heyder
2017-05-31T18:57:38Z
2017-05-31T18:57:38Z
2009
Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure / Sh.M. Abbasov, G.T. Aghaverdiyeva, Z.A. Ibrahimov, U.F. Farajova, R.A. Ibrahimova, Heyder Mehdevi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 357-361. — Бібліогр.: 13 назв. — англ.
1560-8034
PACS 42.25.Bs, 78.40.-q, 81.15.-z
https://nasplib.isofts.kiev.ua/handle/123456789/118836
In this work, the growth properties of Ge₁₋xSix epitaxial films grown on Ge substrates were investigated. The structural perfection of the films was controlled by electron diffraction, electron microscopic and X-ray diffraction methods. It has been established that the surface structure of the sample Ge/Ge₁₋xSix changes after irradiation by accelerated electrons Ф = 5×1016 cm⁻², and generated are surface defects which play the role of traps for change carriers.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
spellingShingle Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
Abbasov, Sh.M.
Aghaverdiyeva, G.T.
Ibrahimov, Z.A.
Farajova, U.F.
Ibrahimova, R.A.
Mehdevi, Heyder
title_short Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
title_full Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
title_fullStr Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
title_full_unstemmed Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
title_sort influence of electron irradiation on spectra of light electroreflection from the surface of ge/ge₁₋xsix heterostructure
author Abbasov, Sh.M.
Aghaverdiyeva, G.T.
Ibrahimov, Z.A.
Farajova, U.F.
Ibrahimova, R.A.
Mehdevi, Heyder
author_facet Abbasov, Sh.M.
Aghaverdiyeva, G.T.
Ibrahimov, Z.A.
Farajova, U.F.
Ibrahimova, R.A.
Mehdevi, Heyder
publishDate 2009
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description In this work, the growth properties of Ge₁₋xSix epitaxial films grown on Ge substrates were investigated. The structural perfection of the films was controlled by electron diffraction, electron microscopic and X-ray diffraction methods. It has been established that the surface structure of the sample Ge/Ge₁₋xSix changes after irradiation by accelerated electrons Ф = 5×1016 cm⁻², and generated are surface defects which play the role of traps for change carriers.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118836
citation_txt Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure / Sh.M. Abbasov, G.T. Aghaverdiyeva, Z.A. Ibrahimov, U.F. Farajova, R.A. Ibrahimova, Heyder Mehdevi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 357-361. — Бібліогр.: 13 назв. — англ.
work_keys_str_mv AT abbasovshm influenceofelectronirradiationonspectraoflightelectroreflectionfromthesurfaceofgege1xsixheterostructure
AT aghaverdiyevagt influenceofelectronirradiationonspectraoflightelectroreflectionfromthesurfaceofgege1xsixheterostructure
AT ibrahimovza influenceofelectronirradiationonspectraoflightelectroreflectionfromthesurfaceofgege1xsixheterostructure
AT farajovauf influenceofelectronirradiationonspectraoflightelectroreflectionfromthesurfaceofgege1xsixheterostructure
AT ibrahimovara influenceofelectronirradiationonspectraoflightelectroreflectionfromthesurfaceofgege1xsixheterostructure
AT mehdeviheyder influenceofelectronirradiationonspectraoflightelectroreflectionfromthesurfaceofgege1xsixheterostructure
first_indexed 2025-12-07T20:41:30Z
last_indexed 2025-12-07T20:41:30Z
_version_ 1850883535958704128