Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
In this work, the growth properties of Ge₁₋xSix epitaxial films grown on Ge substrates were investigated. The structural perfection of the films was controlled by electron diffraction, electron microscopic and X-ray diffraction methods. It has been established that the surface structure of the sa...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2009 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118836 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure / Sh.M. Abbasov, G.T. Aghaverdiyeva, Z.A. Ibrahimov, U.F. Farajova, R.A. Ibrahimova, Heyder Mehdevi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 357-361. — Бібліогр.: 13 назв. — англ. |