Babych, V., Olikh, J., & Tymochko, M. (2009). Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago-Zitierstil (17. Ausg.)Babych, V.М, Ja.М Olikh, und M.D Tymochko. "Influence of Ultrasound Treatment and Dynamic (in-situ) Ultrasound Loading on the Temperature Hysteresis of Electrophysical Characteristics in Irradiated N-Si–Fz." Semiconductor Physics Quantum Electronics & Optoelectronics 2009.
MLA-Zitierstil (8. Ausg.)Babych, V.М, et al. "Influence of Ultrasound Treatment and Dynamic (in-situ) Ultrasound Loading on the Temperature Hysteresis of Electrophysical Characteristics in Irradiated N-Si–Fz." Semiconductor Physics Quantum Electronics & Optoelectronics, 2009.