Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2009
• Hauptverfasser: Babych, V.М., Olikh, Ja.М., Tymochko, M.D.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118840
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz / V.М. Babych, Ja.М. Olikh, M.D. Tymochko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 375-378. — Бібліогр.: 17 назв. — англ.

Presented in this paper are experimental results of ultrasound treatment (UST)
 and dynamic ultrasound loading (USL) influences on the electric activity of radiation
 defects (after y-irradiation) in crystals n-Si–Fz. The results are obtained using the Hall
 effect method within the temperature range 100–300 K. Peculiarities of US action in the
 treatment and loading modes on the temperature hysteresis of electrophysical
 characteristics in investigated material (extension and narrowing) were analyzed.
 Diffusion and deformation mechanisms responsible for US modification of defect
 complexes have been suggested.