Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz
Presented in this paper are experimental results of ultrasound treatment (UST)
 and dynamic ultrasound loading (USL) influences on the electric activity of radiation
 defects (after y-irradiation) in crystals n-Si–Fz. The results are obtained using the Hall
 effect method wit...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2009 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118840 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz / V.М. Babych, Ja.М. Olikh, M.D. Tymochko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 375-378. — Бібліогр.: 17 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | Presented in this paper are experimental results of ultrasound treatment (UST)
and dynamic ultrasound loading (USL) influences on the electric activity of radiation
defects (after y-irradiation) in crystals n-Si–Fz. The results are obtained using the Hall
effect method within the temperature range 100–300 K. Peculiarities of US action in the
treatment and loading modes on the temperature hysteresis of electrophysical
characteristics in investigated material (extension and narrowing) were analyzed.
Diffusion and deformation mechanisms responsible for US modification of defect
complexes have been suggested.
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| ISSN: | 1560-8034 |