Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz
Presented in this paper are experimental results of ultrasound treatment (UST)
 and dynamic ultrasound loading (USL) influences on the electric activity of radiation
 defects (after y-irradiation) in crystals n-Si–Fz. The results are obtained using the Hall
 effect method wit...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2009 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118840 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz / V.М. Babych, Ja.М. Olikh, M.D. Tymochko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 375-378. — Бібліогр.: 17 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862656332778176512 |
|---|---|
| author | Babych, V.М. Olikh, Ja.М. Tymochko, M.D. |
| author_facet | Babych, V.М. Olikh, Ja.М. Tymochko, M.D. |
| citation_txt | Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz / V.М. Babych, Ja.М. Olikh, M.D. Tymochko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 375-378. — Бібліогр.: 17 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Presented in this paper are experimental results of ultrasound treatment (UST)
and dynamic ultrasound loading (USL) influences on the electric activity of radiation
defects (after y-irradiation) in crystals n-Si–Fz. The results are obtained using the Hall
effect method within the temperature range 100–300 K. Peculiarities of US action in the
treatment and loading modes on the temperature hysteresis of electrophysical
characteristics in investigated material (extension and narrowing) were analyzed.
Diffusion and deformation mechanisms responsible for US modification of defect
complexes have been suggested.
|
| first_indexed | 2025-12-02T04:16:51Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118840 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-02T04:16:51Z |
| publishDate | 2009 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Babych, V.М. Olikh, Ja.М. Tymochko, M.D. 2017-05-31T19:03:29Z 2017-05-31T19:03:29Z 2009 Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz / V.М. Babych, Ja.М. Olikh, M.D. Tymochko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 375-378. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 43.35.-c,+d, 61.72.Cc, 61.80.-x, 72.20.My, 81.40.Wx https://nasplib.isofts.kiev.ua/handle/123456789/118840 Presented in this paper are experimental results of ultrasound treatment (UST)
 and dynamic ultrasound loading (USL) influences on the electric activity of radiation
 defects (after y-irradiation) in crystals n-Si–Fz. The results are obtained using the Hall
 effect method within the temperature range 100–300 K. Peculiarities of US action in the
 treatment and loading modes on the temperature hysteresis of electrophysical
 characteristics in investigated material (extension and narrowing) were analyzed.
 Diffusion and deformation mechanisms responsible for US modification of defect
 complexes have been suggested. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz Article published earlier |
| spellingShingle | Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz Babych, V.М. Olikh, Ja.М. Tymochko, M.D. |
| title | Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz |
| title_full | Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz |
| title_fullStr | Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz |
| title_full_unstemmed | Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz |
| title_short | Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz |
| title_sort | influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-si–fz |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118840 |
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