Analysis of properties of optical carriers after long-term storage
Performed in this paper is the analysis of possibilities to create optical information carriers for long-term information storage. Adduced are the results of experimental investigations of properties inherent to optical carriers of the WORM type after 25-year storage. It has been shown that their...
Збережено в:
| Дата: | 2009 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118843 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Analysis of properties of optical carriers after long-term storage / V.V. Petrov, A.A. Kryuchin, I.V. Gorbov, I.O. Kossko, S.O. Kostyukevych// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 399-402. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Performed in this paper is the analysis of possibilities to create optical
information carriers for long-term information storage. Adduced are the results of
experimental investigations of properties inherent to optical carriers of the WORM type
after 25-year storage. It has been shown that their micro-relief structure formed by using
focused laser radiation on thin films of chalcogenide vitreous semiconductors had not
been practically changed after storing them for the above mentioned period in non-heated
areas. |
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