Analysis of properties of optical carriers after long-term storage
Performed in this paper is the analysis of possibilities to create optical
 information carriers for long-term information storage. Adduced are the results of
 experimental investigations of properties inherent to optical carriers of the WORM type
 after 25-year storage. It h...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2009 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118843 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Analysis of properties of optical carriers after long-term storage / V.V. Petrov, A.A. Kryuchin, I.V. Gorbov, I.O. Kossko, S.O. Kostyukevych// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 399-402. — Бібліогр.: 11 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862543760643063808 |
|---|---|
| author | Petrov, V.V. Kryuchyn, A.A. Gorbov, I.V. Kossko, I.O. Kostyukevych, S.O. |
| author_facet | Petrov, V.V. Kryuchyn, A.A. Gorbov, I.V. Kossko, I.O. Kostyukevych, S.O. |
| citation_txt | Analysis of properties of optical carriers after long-term storage / V.V. Petrov, A.A. Kryuchin, I.V. Gorbov, I.O. Kossko, S.O. Kostyukevych// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 399-402. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Performed in this paper is the analysis of possibilities to create optical
information carriers for long-term information storage. Adduced are the results of
experimental investigations of properties inherent to optical carriers of the WORM type
after 25-year storage. It has been shown that their micro-relief structure formed by using
focused laser radiation on thin films of chalcogenide vitreous semiconductors had not
been practically changed after storing them for the above mentioned period in non-heated
areas.
|
| first_indexed | 2025-11-24T23:40:32Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118843 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T23:40:32Z |
| publishDate | 2009 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Petrov, V.V. Kryuchyn, A.A. Gorbov, I.V. Kossko, I.O. Kostyukevych, S.O. 2017-05-31T19:06:30Z 2017-05-31T19:06:30Z 2009 Analysis of properties of optical carriers after long-term storage / V.V. Petrov, A.A. Kryuchin, I.V. Gorbov, I.O. Kossko, S.O. Kostyukevych// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 399-402. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 42.79.Vb, 78.66.Jg https://nasplib.isofts.kiev.ua/handle/123456789/118843 Performed in this paper is the analysis of possibilities to create optical
 information carriers for long-term information storage. Adduced are the results of
 experimental investigations of properties inherent to optical carriers of the WORM type
 after 25-year storage. It has been shown that their micro-relief structure formed by using
 focused laser radiation on thin films of chalcogenide vitreous semiconductors had not
 been practically changed after storing them for the above mentioned period in non-heated
 areas. The authors are very grateful to the specialists from the
 Institute for information recording problems, NAS of
 Ukraine, who assisted in optical information recording
 on these optical carriers and organized their long-term
 storage, as well as to the specialists from V. Lashkaryov
 Institute of Semiconductor Physics for the performed
 studying the pit profiles by using the scanning tunnel
 microscope en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Analysis of properties of optical carriers after long-term storage Article published earlier |
| spellingShingle | Analysis of properties of optical carriers after long-term storage Petrov, V.V. Kryuchyn, A.A. Gorbov, I.V. Kossko, I.O. Kostyukevych, S.O. |
| title | Analysis of properties of optical carriers after long-term storage |
| title_full | Analysis of properties of optical carriers after long-term storage |
| title_fullStr | Analysis of properties of optical carriers after long-term storage |
| title_full_unstemmed | Analysis of properties of optical carriers after long-term storage |
| title_short | Analysis of properties of optical carriers after long-term storage |
| title_sort | analysis of properties of optical carriers after long-term storage |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118843 |
| work_keys_str_mv | AT petrovvv analysisofpropertiesofopticalcarriersafterlongtermstorage AT kryuchynaa analysisofpropertiesofopticalcarriersafterlongtermstorage AT gorboviv analysisofpropertiesofopticalcarriersafterlongtermstorage AT kosskoio analysisofpropertiesofopticalcarriersafterlongtermstorage AT kostyukevychso analysisofpropertiesofopticalcarriersafterlongtermstorage |