Analysis of properties of optical carriers after long-term storage
Performed in this paper is the analysis of possibilities to create optical information carriers for long-term information storage. Adduced are the results of experimental investigations of properties inherent to optical carriers of the WORM type after 25-year storage. It has been shown that their...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Cite this: | Analysis of properties of optical carriers after long-term storage / V.V. Petrov, A.A. Kryuchin, I.V. Gorbov, I.O. Kossko, S.O. Kostyukevych// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 399-402. — Бібліогр.: 11 назв. — англ. |
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Petrov, V.V. Kryuchyn, A.A. Gorbov, I.V. Kossko, I.O. Kostyukevych, S.O. 2017-05-31T19:06:30Z 2017-05-31T19:06:30Z 2009 Analysis of properties of optical carriers after long-term storage / V.V. Petrov, A.A. Kryuchin, I.V. Gorbov, I.O. Kossko, S.O. Kostyukevych// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 399-402. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 42.79.Vb, 78.66.Jg https://nasplib.isofts.kiev.ua/handle/123456789/118843 Performed in this paper is the analysis of possibilities to create optical information carriers for long-term information storage. Adduced are the results of experimental investigations of properties inherent to optical carriers of the WORM type after 25-year storage. It has been shown that their micro-relief structure formed by using focused laser radiation on thin films of chalcogenide vitreous semiconductors had not been practically changed after storing them for the above mentioned period in non-heated areas. The authors are very grateful to the specialists from the Institute for information recording problems, NAS of Ukraine, who assisted in optical information recording on these optical carriers and organized their long-term storage, as well as to the specialists from V. Lashkaryov Institute of Semiconductor Physics for the performed studying the pit profiles by using the scanning tunnel microscope en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Analysis of properties of optical carriers after long-term storage Article published earlier |
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Analysis of properties of optical carriers after long-term storage Petrov, V.V. Kryuchyn, A.A. Gorbov, I.V. Kossko, I.O. Kostyukevych, S.O. |
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Analysis of properties of optical carriers after long-term storage |
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Analysis of properties of optical carriers after long-term storage |
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Analysis of properties of optical carriers after long-term storage |
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analysis of properties of optical carriers after long-term storage |
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Petrov, V.V. Kryuchyn, A.A. Gorbov, I.V. Kossko, I.O. Kostyukevych, S.O. |
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Petrov, V.V. Kryuchyn, A.A. Gorbov, I.V. Kossko, I.O. Kostyukevych, S.O. |
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2009 |
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Semiconductor Physics Quantum Electronics & Optoelectronics |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Performed in this paper is the analysis of possibilities to create optical
information carriers for long-term information storage. Adduced are the results of
experimental investigations of properties inherent to optical carriers of the WORM type
after 25-year storage. It has been shown that their micro-relief structure formed by using
focused laser radiation on thin films of chalcogenide vitreous semiconductors had not
been practically changed after storing them for the above mentioned period in non-heated
areas.
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1560-8034 |
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Analysis of properties of optical carriers after long-term storage / V.V. Petrov, A.A. Kryuchin, I.V. Gorbov, I.O. Kossko, S.O. Kostyukevych// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 399-402. — Бібліогр.: 11 назв. — англ. |
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AT petrovvv analysisofpropertiesofopticalcarriersafterlongtermstorage AT kryuchynaa analysisofpropertiesofopticalcarriersafterlongtermstorage AT gorboviv analysisofpropertiesofopticalcarriersafterlongtermstorage AT kosskoio analysisofpropertiesofopticalcarriersafterlongtermstorage AT kostyukevychso analysisofpropertiesofopticalcarriersafterlongtermstorage |
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009. V. 12, N 4. P. 399-402.
© 2009, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
399
PACS 42.79.Vb, 78.66.Jg
Analysis of properties of optical carriers after long-term storage
V.V. Petrov1, A.A. Kryuchyn1, I.V. Gorbov1, I.O. Kossko1 S.O. Kostyukevych2
1 Institute for information recording problems, NAS of Ukraine
2, Shpak str., 03113 Kyiv, Ukraine, Phone: (044)-456-8389, fax: (044)-241-7233, e-mail: petrov@ipri.kiev.ua
2 V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine
e-mail: sekret@spie.org.ua
Abstract. Performed in this paper is the analysis of possibilities to create optical
information carriers for long-term information storage. Adduced are the results of
experimental investigations of properties inherent to optical carriers of the WORM type
after 25-year storage. It has been shown that their micro-relief structure formed by using
focused laser radiation on thin films of chalcogenide vitreous semiconductors had not
been practically changed after storing them for the above mentioned period in non-heated
areas.
Keywords: optical carrier, long-term storage, photo-thermal recording, chalcogenide
vitreous semiconductor.
Manuscript received 28.05.09; accepted for publication 10.09.09; published online 30.10.09.
1. Introduction
Optical methods for information recording possess
considerable potentialities to provide reliable long-term
data storage. Realization of these opportunities is related
with necessity to solve a plethora of interdependent
tasks: choice of a carrier type and way to represent
information, synthesis of registering media and
technology for information recording on chosen
substrates for optical carriers. For a long time, when
developing the methods of optical recording, it was
created, studied and used many types of optical carriers
for various applications.
Disc carriers of the WORM type for photo-thermal
recording were the first ones that found wide
applications. Basic technical solutions that were used in
creation of these carriers provided a high density and
speed of information recording. But, most importantly,
they ensured a high reliability of data storage [1 – 3].
Application of plastic substrates in optical carriers
allowed to essentially enhance processability in
manufacturing disc optical carriers, but it resulted in
essential shortening the guaranteed terms for data
storage. A high reliability of data storage in optical
carriers of the WORM type was provided due to the
recording method based on photo-thermal destruction of
absorbing layer (ablation recording). Almost for thirty
years of investigations devoted to registering media for
optical carriers with single-stage recording, there were
offered many various types of registering media mainly
based on organic dyes and semiconductor materials,
multi-layer metal alloys. The performed investigations
showed that the highest reliability of data storage is
provided with the photo-thermal recording methods
based on local destruction of the absorbing layer (i.e.,
ablation recording methods) as well as registering media
with creation of thermo-stimulated tips caused by
melting metallic films [4, 5]. In recent years, there arise
proposals in regard to using the optical carriers made in
accord with the ablation recording method for long-term
data storage with application of new light-absorbing
materials [6]. Many attempts were made to estimate
terms of data storage in WORM type optical carriers,
and some accelerated tests to determine these terms [7]
were performed. But it seems reasonable to analyze
changes in optical carrier performances under conditions
of long-term storage. In relation with it, the
investigations of properties inherent to optical carriers,
the information recording in which was realized 25 years
ago using the ablation method.
2. Substantiation for the choice of materials for
registering media providing long-term data storage
For a long time, to create registering media for WORM
type optical carriers, tellurium alloys were widely used
[1 – 3]. The choice of these materials was conditioned
by the fact that thin films of tellurium alloys possess low
thermal conductivity and low melting temperature. It
provides high resolution of registering media based on
tellurium vitreous alloys (minimum size of recorded pits
is close to 0.3 – 0.5 μm) as well as the possibility to
record information with low-powered semiconductor
lasers. Performed experimental investigations showed
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009. V. 12, N 4. P. 399-402.
© 2009, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
400
that a dense oxide layer is created on the surface of
tellurium glassy alloys.
In the process of creation of the WORM type
optical disc carriers, the main attention was paid to the
choice of materials for registering media capable to
provide long-term storage of recorded data. Tens of
glassy tellurium alloy compositions were studied to use
them as registering media for optical disc carriers of the
above type. In accord with preliminary calculations, to
make registering media four-component eutectic alloy
Te14Sb10Se61Ge15 [8] was chosen, which should provide
long-term storage of recorded information. The
distinction of using this alloy was in necessity to apply
radiation with the wavelengths shorter than 550 nm to
record information. Being aimed at performing the
comparative investigations of optical carriers, there were
made optical discs with registering media containing
more than 60% of tellurium. Advantage of these carriers
was that information recording in them could be realized
with infra-red lasers. But the main reason to use just
tellurium alloys instead of pure tellurium films was the
necessity to increase the corrosion hardness of
registering media. On the surface of tellurium alloys
with Sb, Se, Ge, there arise dense oxide films that reduce
the speed of tellurium oxidation [9].
It was thought that the oxide film arising on the
surface of vitreous tellurium layer will protect it against
further oxygen penetration. The methods of accelerated
aging (exposure of samples to increased humidity and
temperature) showed that the speed of growth inherent to
the thickness of this oxide layer is sharply reduced with
increasing this thickness. The performed layer-by-layer
Auger analysis of registering medium Te14Sb10Sе61Gе15
manufactured 30 years ago showed that the oxygen
content does not exceed 13 ат. %, and oxygen is
uniformly distributed along the thickness.
Depicted in Fig. 1 are the fragments of respective
Auger spectra. In the initial state (Fig. 1a), at the oxygen
background 475, 490, 511 eV (the latter is the main
peak) lines of Sb and Te are not registered. After etching
the oxide film (Fig. 1b), Sb and Te peaks are developed
(457 and 498 eV), and the oxygen content is reduced
down to approximately 13 at.%. In the case of tellurium,
superposition of the main tellurium Auger peak with the
oxygen one takes place. Observed there is the shift of the
peak from the scale position 491 up to 498 eV.
It means that the oxygen-passivated film of multi-
component chalcogenides preserve its chemical
composition, while the oxide film was easily etched by
argon ion beam. It is noteworthy that oxygen distribution
has a similar character both in unsealed registering media
and in those covered with a protective polymer layer.
Availability of considerable oxygen amount in this
registering media can be related with technological
features of manufacturing the thin registering layer.
When using vacuum deposition, there arises
considerable amount of broken bonds in the structure of
chalcogenide glass, which results in stage-by-stage
accumulation of oxygen in this thin film.
a) b)
Fig. 1. Distribution of oxygen in registering medium
Te14Sb10Sе61Gе15 before etching (a) and after etching with
argon ion beam down to the depths 25 – 50 nm (b).
3. Investigation results for optical carriers after long-
term storage
Recording information onto optical disc carriers with the
registering layer Te14Sb10Sе61Gе15 was realized using
focused radiation of a solid-state laser with the
wavelength 530 nm. This record was made due to
formation of pits in the absorbing chalcogenide layer.
Information was registered on carriers of two types: first,
we used optical disc carriers with open surface of the
absorbing layer; second, this light-absorbing information
layer was protected with a polymer film. In both cases,
laser radiation was focused through transparent glass
substrate of 3-mm thickness by using a special objective
with the numeric aperture 0.65. In the latter case, we
joined two substrates of the optical carrier, the thickness
of the polymer layer was close to 0.5 mm. That provided
independent recording process for each substrate of the
optical carrier.
After long-term storage (25 years), these optical
disc carriers kept mirror reflection, uniformity of coating
layers within the area of data recording. The shape and
sizes of pits appear to be slightly changed: the sizes are
larger a little. Fig. 2 shows the look of the recording
zone on the optical carrier after its 25-year storage.
a) b)
Fig. 2. External view of the recording zone on the optical
carrier: data recording is realized from one side of the guide
track (a) and from both sides (b).
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009. V. 12, N 4. P. 399-402.
© 2009, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
401
a) b)
Fig. 3. Guide tracks on the optical disc carrier with registering
medium Te14Sb10Sе61Ge15 (track pitch 1.6 μm). The images
are obtained using: a) optical microscope; b) scanning tunnel
microscope.
In the course of manufacturing the optical carrier,
the surface of registering medium was processed with
focused laser radiation to create concentric guide tracks.
Information recording was realized on one or both sides
of guide tracks. This way to form guide tracks is rather
technological (it does not require any special preparation
of the information carrier substrate, the tracks can be
recorded using the facility for information recording).
However, this way has essential deficiencies, namely:
- registering medium of the information carrier is
separated by narrow strips, which can have a negative
impact on the carrier storage term;
- availability of a bowl formed from material of
registering medium along the guide tracks results in
reduced density of information recording.
A higher density of recording can be reached in the
case when guide tracks are formed in the substrate. It
can be realized in glass substrates by using plasmo-
chemical etching [10, 11]. After long-term storage of the
optical carrier with registering medium
Te14Sb10Sе61Ge15, guide tracks were kept unchanged,
their sizes did not change within accuracy limits (Fig. 3).
Analogous changes in pit shapes were observed in
the work [7]. The authors of this paper made the
assumption that it is reasonable to use registering media
based on chalcogenide semiconductors with non-
reversible phase transitions for long-term data storage.
It is noteworthy that thin films with high tellurium
content (As20Se20Te60) become optically transparent after
continuous storage in the same climatic conditions as
those for the carriers where eutectic alloy
Te14Sb10Sе61Ge15 was used. On the surface of
As20Se20Te60, one can visually observe information
tracks by way of a diffraction grating. The shape of
information tracks in the oxidized registering medium is
depicted in Fig. 4.
Fig. 4. Information tracks in the registering medium As20Se20Te60 after long-term storage.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009. V. 12, N 4. P. 399-402.
© 2009, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
402
Fig. 5. The area of optical carrier registering medium with the
tellurium content 40 – 50 % after continuous storage.
Some samples of optical carriers with the tellurium
content 40 – 50 % in their registering media demonstrate
surface crystallization, which results in losses of
recorded information (Fig. 5).
As a whole, hopes to create optical disc carriers of
the WORM type with glassy substrates based on vitreous
chalcogenide semiconductors for long-term information
storage are justified. However, our further investigations
of properties inherent to optical carriers aimed at long-
term storage have showed that optical carriers where
micro-relief structure is formed in the glassy substrate
based on highly stable material have considerably higher
reliability. In optical carriers where data recording is
realized in CD and DVD formats, to make these
substrates one can use optically transparent silicate or
borosilicate glasses as well as silica ones. To create Blu-
ray carriers, beside the above mentioned materials one
can use substrates made of monocrystalline ones.
4. Conclusions
1. Optical carriers with registering media made of
vitreous chalcogenide semiconductors for information
recording by local photo-thermal destruction of the
absorbing layer with focused laser radiation keep their
physical properties after long-term storage.
2. The shape and sizes of pits that code information
show inessential changes: one can observe only a small
increase in the pit sizes.
3. Observed is oxidation of components that
comprise the composition of chalcogenide vitreous
semiconductors used for manufacturing the registering
medium of optical carriers.
Acknowledgements
The authors are very grateful to the specialists from the
Institute for information recording problems, NAS of
Ukraine, who assisted in optical information recording
on these optical carriers and organized their long-term
storage, as well as to the specialists from V. Lashkaryov
Institute of Semiconductor Physics for the performed
studying the pit profiles by using the scanning tunnel
microscope.
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