Thin silicon solar cells with SiОх /SiNx Bragg mirror rear surface reflector

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2009
• Автори: Ivanov, I.I., Nychyporuk, T.V., Skryshevsky, V.A., Lemiti, M.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118845
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Thin silicon solar cells with SiОх /SiNx Bragg mirror
 rear surface reflector / I.I. Ivanov, T.V. Nychyporuk, V.A. Skryshevsky, M. Lemiti // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 406-411. — Бібліогр.: 9 назв. — англ.

. Bragg reflectors consisting of sequence of dielectric layers with a quarter
 wavelengths optical thickness are promising to create solar cells of third generation.
 SiОх /SiNx Bragg mirror (BM) at the backside of textured multicrystalline silicon solar
 cells was fabricated by PECVD method. BM with 9 bi-layers was optimized for the
 maximum reflectivity within the wavelength range Δλ = 820...1110 nm. The maximum
 measured reflectivity is approximately 82 %. Measured reflectivity values were
 compared with the simulated ones by using the transfer matrix. Effect of parameters for
 pyramids of several types on the total reflectivity of BM deposited on textured silicon
 surface was simulated. Enhancement of light absorption and external quantum efficiency
 in the longwave part of the spectrum (λ > 940 nm) was observed, and it was explained as
 increase of the photon absorption length. The influence of BM on passivation of SC rear
 surface was explored. The cell back contact was formed by Al diffusion through BM to
 the μc-Si wafer and promoted by a pulsed laser. For SC with BM, the efficiency 13.75 %
 is obtained comparatively with efficiency 13.58 % for SC without BM.