Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing
The defective structure of specifically undoped cadmium telluride crystals was researched using the theory of thermodynamic potentials. The calculated concentration of point defects and free charge carriers in the CdTe crystals, depending on technological factors of two-temperature annealing (ann...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2009 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118846 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing / V.V. Prokopiv, P.M. Fochuk, I.V. Gorichok, E.V. Vergak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 412-416. — Бібліогр.: 27 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The defective structure of specifically undoped cadmium telluride crystals was
researched using the theory of thermodynamic potentials. The calculated concentration of
point defects and free charge carriers in the CdTe crystals, depending on technological
factors of two-temperature annealing (annealing temperature T and partial pressure of
cadmium PCd vapor). The dominant types of defects that determine the basic properties
of the material n- and p-type conduction were determined.
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| ISSN: | 1560-8034 |