Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2009
• Автори: Prokopiv, V.V., Fochuk, P.M., Gorichok, I.V., Vergak, E.V.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118846
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Thermodynamic analysis of processes creating
 the defects in cadmium telluride crystals under conditions
 of high-temperature annealing / V.V. Prokopiv, P.M. Fochuk, I.V. Gorichok, E.V. Vergak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 412-416. — Бібліогр.: 27 назв. — англ.

The defective structure of specifically undoped cadmium telluride crystals was
 researched using the theory of thermodynamic potentials. The calculated concentration of
 point defects and free charge carriers in the CdTe crystals, depending on technological
 factors of two-temperature annealing (annealing temperature T and partial pressure of
 cadmium PCd vapor). The dominant types of defects that determine the basic properties
 of the material n- and p-type conduction were determined.