Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing
The defective structure of specifically undoped cadmium telluride crystals was researched using the theory of thermodynamic potentials. The calculated concentration of point defects and free charge carriers in the CdTe crystals, depending on technological factors of two-temperature annealing (ann...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2009 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118846 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing / V.V. Prokopiv, P.M. Fochuk, I.V. Gorichok, E.V. Vergak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 412-416. — Бібліогр.: 27 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118846 |
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dspace |
| spelling |
Prokopiv, V.V. Fochuk, P.M. Gorichok, I.V. Vergak, E.V. 2017-05-31T19:11:33Z 2017-05-31T19:11:33Z 2009 Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing / V.V. Prokopiv, P.M. Fochuk, I.V. Gorichok, E.V. Vergak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 412-416. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS 61.72.Bb, Ji, -y https://nasplib.isofts.kiev.ua/handle/123456789/118846 The defective structure of specifically undoped cadmium telluride crystals was researched using the theory of thermodynamic potentials. The calculated concentration of point defects and free charge carriers in the CdTe crystals, depending on technological factors of two-temperature annealing (annealing temperature T and partial pressure of cadmium PCd vapor). The dominant types of defects that determine the basic properties of the material n- and p-type conduction were determined. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing |
| spellingShingle |
Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing Prokopiv, V.V. Fochuk, P.M. Gorichok, I.V. Vergak, E.V. |
| title_short |
Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing |
| title_full |
Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing |
| title_fullStr |
Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing |
| title_full_unstemmed |
Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing |
| title_sort |
thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing |
| author |
Prokopiv, V.V. Fochuk, P.M. Gorichok, I.V. Vergak, E.V. |
| author_facet |
Prokopiv, V.V. Fochuk, P.M. Gorichok, I.V. Vergak, E.V. |
| publishDate |
2009 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The defective structure of specifically undoped cadmium telluride crystals was
researched using the theory of thermodynamic potentials. The calculated concentration of
point defects and free charge carriers in the CdTe crystals, depending on technological
factors of two-temperature annealing (annealing temperature T and partial pressure of
cadmium PCd vapor). The dominant types of defects that determine the basic properties
of the material n- and p-type conduction were determined.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118846 |
| citation_txt |
Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing / V.V. Prokopiv, P.M. Fochuk, I.V. Gorichok, E.V. Vergak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 412-416. — Бібліогр.: 27 назв. — англ. |
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| first_indexed |
2025-12-07T21:18:30Z |
| last_indexed |
2025-12-07T21:18:30Z |
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