Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing
The defective structure of specifically undoped cadmium telluride crystals was
 researched using the theory of thermodynamic potentials. The calculated concentration of
 point defects and free charge carriers in the CdTe crystals, depending on technological
 factors of two-te...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2009 |
| ISSN: | 1560-8034 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118846 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Thermodynamic analysis of processes creating
 the defects in cadmium telluride crystals under conditions
 of high-temperature annealing / V.V. Prokopiv, P.M. Fochuk, I.V. Gorichok, E.V. Vergak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 412-416. — Бібліогр.: 27 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862752737138049024 |
|---|---|
| author | Prokopiv, V.V. Fochuk, P.M. Gorichok, I.V. Vergak, E.V. |
| author_facet | Prokopiv, V.V. Fochuk, P.M. Gorichok, I.V. Vergak, E.V. |
| citation_txt | Thermodynamic analysis of processes creating
 the defects in cadmium telluride crystals under conditions
 of high-temperature annealing / V.V. Prokopiv, P.M. Fochuk, I.V. Gorichok, E.V. Vergak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 412-416. — Бібліогр.: 27 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The defective structure of specifically undoped cadmium telluride crystals was
researched using the theory of thermodynamic potentials. The calculated concentration of
point defects and free charge carriers in the CdTe crystals, depending on technological
factors of two-temperature annealing (annealing temperature T and partial pressure of
cadmium PCd vapor). The dominant types of defects that determine the basic properties
of the material n- and p-type conduction were determined.
|
| first_indexed | 2025-12-07T21:18:30Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118846 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T21:18:30Z |
| publishDate | 2009 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Prokopiv, V.V. Fochuk, P.M. Gorichok, I.V. Vergak, E.V. 2017-05-31T19:11:33Z 2017-05-31T19:11:33Z 2009 Thermodynamic analysis of processes creating
 the defects in cadmium telluride crystals under conditions
 of high-temperature annealing / V.V. Prokopiv, P.M. Fochuk, I.V. Gorichok, E.V. Vergak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 412-416. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS 61.72.Bb, Ji, -y https://nasplib.isofts.kiev.ua/handle/123456789/118846 The defective structure of specifically undoped cadmium telluride crystals was
 researched using the theory of thermodynamic potentials. The calculated concentration of
 point defects and free charge carriers in the CdTe crystals, depending on technological
 factors of two-temperature annealing (annealing temperature T and partial pressure of
 cadmium PCd vapor). The dominant types of defects that determine the basic properties
 of the material n- and p-type conduction were determined. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing Article published earlier |
| spellingShingle | Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing Prokopiv, V.V. Fochuk, P.M. Gorichok, I.V. Vergak, E.V. |
| title | Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing |
| title_full | Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing |
| title_fullStr | Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing |
| title_full_unstemmed | Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing |
| title_short | Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing |
| title_sort | thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118846 |
| work_keys_str_mv | AT prokopivvv thermodynamicanalysisofprocessescreatingthedefectsincadmiumtelluridecrystalsunderconditionsofhightemperatureannealing AT fochukpm thermodynamicanalysisofprocessescreatingthedefectsincadmiumtelluridecrystalsunderconditionsofhightemperatureannealing AT gorichokiv thermodynamicanalysisofprocessescreatingthedefectsincadmiumtelluridecrystalsunderconditionsofhightemperatureannealing AT vergakev thermodynamicanalysisofprocessescreatingthedefectsincadmiumtelluridecrystalsunderconditionsofhightemperatureannealing |