Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2009
• Main Authors: Prokopiv, V.V., Fochuk, P.M., Gorichok, I.V., Vergak, E.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118846
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Thermodynamic analysis of processes creating
 the defects in cadmium telluride crystals under conditions
 of high-temperature annealing / V.V. Prokopiv, P.M. Fochuk, I.V. Gorichok, E.V. Vergak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 412-416. — Бібліогр.: 27 назв. — англ.

The defective structure of specifically undoped cadmium telluride crystals was
 researched using the theory of thermodynamic potentials. The calculated concentration of
 point defects and free charge carriers in the CdTe crystals, depending on technological
 factors of two-te...