Stacking Faults in the single crystals
The single crystals of InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ viz. MoRe₀.₀₅Se₁.₉₉₅, MoRe₀.₀₀₁Se₁.₉₉₉ and Mo₀.₉₉₅Re₀.₀₀₅Se₂ have been grown by a direct vapour transport technique (DVT) in the laboratory. Structural characterization of these crystals was made using the XRD method. The particle siz...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2009 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118848 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Stacking Faults in the single crystals / Mihir M. Vora, Aditya M. Vora // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 421-423. — Бібліогр.: 23 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118848 |
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Mihir M. Vora Aditya M. Vora 2017-05-31T19:14:24Z 2017-05-31T19:14:24Z 2009 Stacking Faults in the single crystals / Mihir M. Vora, Aditya M. Vora // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 421-423. — Бібліогр.: 23 назв. — англ. 1560-8034 PACS 61.10.-i, 61.72.-y, 61.72.Dd, Nn https://nasplib.isofts.kiev.ua/handle/123456789/118848 The single crystals of InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ viz. MoRe₀.₀₅Se₁.₉₉₅, MoRe₀.₀₀₁Se₁.₉₉₉ and Mo₀.₉₉₅Re₀.₀₀₅Se₂ have been grown by a direct vapour transport technique (DVT) in the laboratory. Structural characterization of these crystals was made using the XRD method. The particle size for a number of reflections has been calculated using the Scherrer formula. There are considerable variations appearing in deformation (α) and growth (β) fault probabilities in InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ single crystals due to their off-stoichiometry, which possesses the stacking fault in the single crystal. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Stacking Faults in the single crystals Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Stacking Faults in the single crystals |
| spellingShingle |
Stacking Faults in the single crystals Mihir M. Vora Aditya M. Vora |
| title_short |
Stacking Faults in the single crystals |
| title_full |
Stacking Faults in the single crystals |
| title_fullStr |
Stacking Faults in the single crystals |
| title_full_unstemmed |
Stacking Faults in the single crystals |
| title_sort |
stacking faults in the single crystals |
| author |
Mihir M. Vora Aditya M. Vora |
| author_facet |
Mihir M. Vora Aditya M. Vora |
| publishDate |
2009 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The single crystals of InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ viz.
MoRe₀.₀₅Se₁.₉₉₅, MoRe₀.₀₀₁Se₁.₉₉₉ and Mo₀.₉₉₅Re₀.₀₀₅Se₂ have been grown by a direct
vapour transport technique (DVT) in the laboratory. Structural characterization of these
crystals was made using the XRD method. The particle size for a number of reflections
has been calculated using the Scherrer formula. There are considerable variations
appearing in deformation (α) and growth (β) fault probabilities in InxMoSe₂ (0 ≤ x ≤ 1)
and Re-doped MoSe₂ single crystals due to their off-stoichiometry, which possesses the
stacking fault in the single crystal.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118848 |
| fulltext |
|
| citation_txt |
Stacking Faults in the single crystals / Mihir M. Vora, Aditya M. Vora // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 421-423. — Бібліогр.: 23 назв. — англ. |
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AT mihirmvora stackingfaultsinthesinglecrystals AT adityamvora stackingfaultsinthesinglecrystals |
| first_indexed |
2025-11-24T10:14:04Z |
| last_indexed |
2025-11-24T10:14:04Z |
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1850844667466219520 |