Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width
The relationship between response speed of a silicon n-well/p substrate
 photodiode and the depletion layer width has been investigated. Variation of both the
 junction capacitance and the series resistance of the photodiode with the depletion layer
 width have been analyzed....
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2009 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118849 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Approaching to an optimal value of rise time in n-well/p substrate
 photodiode by controlling depletion layer width / Emad Hameed Hussein // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 424-428. — Бібліогр.: 13 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The relationship between response speed of a silicon n-well/p substrate
photodiode and the depletion layer width has been investigated. Variation of both the
junction capacitance and the series resistance of the photodiode with the depletion layer
width have been analyzed. It is shown that the contribution of the time constant and the
drift time in the rise time within the depletion layer can be decreased to an optimal value
(less than 1ns) just for specific value of the depletion layer width and smaller value of the
diffused junction area.
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| ISSN: | 1560-8034 |