Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width
The relationship between response speed of a silicon n-well/p substrate photodiode and the depletion layer width has been investigated. Variation of both the junction capacitance and the series resistance of the photodiode with the depletion layer width have been analyzed. It is shown that the co...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2009 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118849 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width / Emad Hameed Hussein // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 424-428. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118849 |
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dspace |
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Emad Hameed Hussein 2017-05-31T19:16:27Z 2017-05-31T19:16:27Z 2009 Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width / Emad Hameed Hussein // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 424-428. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 73.40.-c, 85.60.Dw https://nasplib.isofts.kiev.ua/handle/123456789/118849 The relationship between response speed of a silicon n-well/p substrate photodiode and the depletion layer width has been investigated. Variation of both the junction capacitance and the series resistance of the photodiode with the depletion layer width have been analyzed. It is shown that the contribution of the time constant and the drift time in the rise time within the depletion layer can be decreased to an optimal value (less than 1ns) just for specific value of the depletion layer width and smaller value of the diffused junction area. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width |
| spellingShingle |
Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width Emad Hameed Hussein |
| title_short |
Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width |
| title_full |
Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width |
| title_fullStr |
Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width |
| title_full_unstemmed |
Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width |
| title_sort |
approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width |
| author |
Emad Hameed Hussein |
| author_facet |
Emad Hameed Hussein |
| publishDate |
2009 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The relationship between response speed of a silicon n-well/p substrate
photodiode and the depletion layer width has been investigated. Variation of both the
junction capacitance and the series resistance of the photodiode with the depletion layer
width have been analyzed. It is shown that the contribution of the time constant and the
drift time in the rise time within the depletion layer can be decreased to an optimal value
(less than 1ns) just for specific value of the depletion layer width and smaller value of the
diffused junction area.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118849 |
| citation_txt |
Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width / Emad Hameed Hussein // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 424-428. — Бібліогр.: 13 назв. — англ. |
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2025-12-01T11:04:39Z |
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2025-12-01T11:04:39Z |
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