Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2009
• Main Author: Emad Hameed Hussein
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118849
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width / Emad Hameed Hussein // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 424-428. — Бібліогр.: 13 назв. — англ.

The relationship between response speed of a silicon n-well/p substrate photodiode and the depletion layer width has been investigated. Variation of both the junction capacitance and the series resistance of the photodiode with the depletion layer width have been analyzed. It is shown that the co...