Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2009
• ISSN: 1560-8034
• 1. Verfasser: Emad Hameed Hussein
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118849
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Approaching to an optimal value of rise time in n-well/p substrate
 photodiode by controlling depletion layer width / Emad Hameed Hussein // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 424-428. — Бібліогр.: 13 назв. — англ.

The relationship between response speed of a silicon n-well/p substrate
 photodiode and the depletion layer width has been investigated. Variation of both the
 junction capacitance and the series resistance of the photodiode with the depletion layer
 width have been analyzed....