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Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width

The relationship between response speed of a silicon n-well/p substrate
 photodiode and the depletion layer width has been investigated. Variation of both the
 junction capacitance and the series resistance of the photodiode with the depletion layer
 width have been analyzed....

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2009
Main Author: Emad Hameed Hussein
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118849
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Approaching to an optimal value of rise time in n-well/p substrate
 photodiode by controlling depletion layer width / Emad Hameed Hussein // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 424-428. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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