Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase
The work has suggested an adequate model describing formation of defects in films of AIVBVI compounds in vapor-phase growth. Being based on this model, it has given an analytical description of dependences for film electrophysical parameters (concentrations n, p and mobilities µn, µp of free char...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2008 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118850 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase / Ya.P. Saliy, І.М. Freik, V.V. Prokopiv (Jr) // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 167-170. — Бібліогр.: 6 назв. — англ. |
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Saliy, Ya.P. Freik, I.M. Prokopiv (Jr), V.V. 2017-05-31T19:23:31Z 2017-05-31T19:23:31Z 2008 Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase / Ya.P. Saliy, І.М. Freik, V.V. Prokopiv (Jr) // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 167-170. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 71.20.Nr, 71.55.-i, 81.15.Aa https://nasplib.isofts.kiev.ua/handle/123456789/118850 The work has suggested an adequate model describing formation of defects in films of AIVBVI compounds in vapor-phase growth. Being based on this model, it has given an analytical description of dependences for film electrophysical parameters (concentrations n, p and mobilities µn, µp of free charge carriers) on technological factors of film growth. We have calculated concentrations of activated and inactivated defects as subject to temperature of film deposition. The developed model enables determination of entropy and enthalpy of defect formation processes. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase |
| spellingShingle |
Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase Saliy, Ya.P. Freik, I.M. Prokopiv (Jr), V.V. |
| title_short |
Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase |
| title_full |
Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase |
| title_fullStr |
Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase |
| title_full_unstemmed |
Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase |
| title_sort |
formation and activation of defects in films of aivbvi compounds in the process of growing from vapor phase |
| author |
Saliy, Ya.P. Freik, I.M. Prokopiv (Jr), V.V. |
| author_facet |
Saliy, Ya.P. Freik, I.M. Prokopiv (Jr), V.V. |
| publishDate |
2008 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The work has suggested an adequate model describing formation of defects in
films of AIVBVI compounds in vapor-phase growth. Being based on this model, it has
given an analytical description of dependences for film electrophysical parameters
(concentrations n, p and mobilities µn, µp of free charge carriers) on technological factors
of film growth. We have calculated concentrations of activated and inactivated defects as
subject to temperature of film deposition. The developed model enables determination of
entropy and enthalpy of defect formation processes.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118850 |
| citation_txt |
Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase / Ya.P. Saliy, І.М. Freik, V.V. Prokopiv (Jr) // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 167-170. — Бібліогр.: 6 назв. — англ. |
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| first_indexed |
2025-12-07T13:11:58Z |
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2025-12-07T13:11:58Z |
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