Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase
The work has suggested an adequate model describing formation of defects in
 films of AIVBVI compounds in vapor-phase growth. Being based on this model, it has
 given an analytical description of dependences for film electrophysical parameters
 (concentrations n, p and mobili...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2008 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118850 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase / Ya.P. Saliy, І.М. Freik, V.V. Prokopiv (Jr) // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 167-170. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862617174212870144 |
|---|---|
| author | Saliy, Ya.P. Freik, I.M. Prokopiv (Jr), V.V. |
| author_facet | Saliy, Ya.P. Freik, I.M. Prokopiv (Jr), V.V. |
| citation_txt | Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase / Ya.P. Saliy, І.М. Freik, V.V. Prokopiv (Jr) // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 167-170. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The work has suggested an adequate model describing formation of defects in
films of AIVBVI compounds in vapor-phase growth. Being based on this model, it has
given an analytical description of dependences for film electrophysical parameters
(concentrations n, p and mobilities µn, µp of free charge carriers) on technological factors
of film growth. We have calculated concentrations of activated and inactivated defects as
subject to temperature of film deposition. The developed model enables determination of
entropy and enthalpy of defect formation processes.
|
| first_indexed | 2025-12-07T13:11:58Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118850 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T13:11:58Z |
| publishDate | 2008 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Saliy, Ya.P. Freik, I.M. Prokopiv (Jr), V.V. 2017-05-31T19:23:31Z 2017-05-31T19:23:31Z 2008 Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase / Ya.P. Saliy, І.М. Freik, V.V. Prokopiv (Jr) // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 167-170. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 71.20.Nr, 71.55.-i, 81.15.Aa https://nasplib.isofts.kiev.ua/handle/123456789/118850 The work has suggested an adequate model describing formation of defects in
 films of AIVBVI compounds in vapor-phase growth. Being based on this model, it has
 given an analytical description of dependences for film electrophysical parameters
 (concentrations n, p and mobilities µn, µp of free charge carriers) on technological factors
 of film growth. We have calculated concentrations of activated and inactivated defects as
 subject to temperature of film deposition. The developed model enables determination of
 entropy and enthalpy of defect formation processes. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase Article published earlier |
| spellingShingle | Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase Saliy, Ya.P. Freik, I.M. Prokopiv (Jr), V.V. |
| title | Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase |
| title_full | Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase |
| title_fullStr | Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase |
| title_full_unstemmed | Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase |
| title_short | Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase |
| title_sort | formation and activation of defects in films of aivbvi compounds in the process of growing from vapor phase |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118850 |
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