Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2008
• Hauptverfasser: Saliy, Ya.P., Freik, I.M., Prokopiv (Jr), V.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118850
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase / Ya.P. Saliy, І.М. Freik, V.V. Prokopiv (Jr) // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 167-170. — Бібліогр.: 6 назв. — англ.

The work has suggested an adequate model describing formation of defects in
 films of AIVBVI compounds in vapor-phase growth. Being based on this model, it has
 given an analytical description of dependences for film electrophysical parameters
 (concentrations n, p and mobili...