Research of Structural Quality of Big-Size KDP Crystals
The faulted structure formation at a rapid growing of big-size KDP crystals has been analyzed. A transitional zone with high degree of lattice faultness has been revealed between the seed and the pure zone of the grown crystal by X-ray diffraction methods with high resolution. It has been determi...
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| Datum: | 2008 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118853 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Research of Structural Quality of Big-Size KDP Crystals / V. I. Salo, V. F. Tkachenko, V.M. Puzikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 132-135. — Бібліогр.: 7 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The faulted structure formation at a rapid growing of big-size KDP crystals has
been analyzed. A transitional zone with high degree of lattice faultness has been revealed
between the seed and the pure zone of the grown crystal by X-ray diffraction methods with
high resolution. It has been determined that, regardless of the seed form, the transitional layer
in grown crystals reaches the value of~12 mm. The nonmonotone variation of the crystal
lattice parameter (∆d/d) within ±2.5·10⁻⁵ and the halfwidth of a diffraction reflection curve
(β = 5.5÷8 arcs for direction [103] and β = 7÷9 arcs for direction [100]) and the increase of
the integral power of reflection of the X-ray beam IR
by 1.5 times are observed in the
transitional lay |
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