Research of Structural Quality of Big-Size KDP Crystals

The faulted structure formation at a rapid growing of big-size KDP crystals has been analyzed. A transitional zone with high degree of lattice faultness has been revealed between the seed and the pure zone of the grown crystal by X-ray diffraction methods with high resolution. It has been determi...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2008
Hauptverfasser: Salo, V.I., Tkachenko, V.F., Puzikov, V.M.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118853
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Research of Structural Quality of Big-Size KDP Crystals / V. I. Salo, V. F. Tkachenko, V.M. Puzikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 132-135. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118853
record_format dspace
spelling Salo, V.I.
Tkachenko, V.F.
Puzikov, V.M.
2017-05-31T19:26:16Z
2017-05-31T19:26:16Z
2008
Research of Structural Quality of Big-Size KDP Crystals / V. I. Salo, V. F. Tkachenko, V.M. Puzikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 132-135. — Бібліогр.: 7 назв. — англ.
1560-8034
PACS 61.10.-i
https://nasplib.isofts.kiev.ua/handle/123456789/118853
The faulted structure formation at a rapid growing of big-size KDP crystals has been analyzed. A transitional zone with high degree of lattice faultness has been revealed between the seed and the pure zone of the grown crystal by X-ray diffraction methods with high resolution. It has been determined that, regardless of the seed form, the transitional layer in grown crystals reaches the value of~12 mm. The nonmonotone variation of the crystal lattice parameter (∆d/d) within ±2.5·10⁻⁵ and the halfwidth of a diffraction reflection curve (β = 5.5÷8 arcs for direction [103] and β = 7÷9 arcs for direction [100]) and the increase of the integral power of reflection of the X-ray beam IR by 1.5 times are observed in the transitional lay
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Research of Structural Quality of Big-Size KDP Crystals
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Research of Structural Quality of Big-Size KDP Crystals
spellingShingle Research of Structural Quality of Big-Size KDP Crystals
Salo, V.I.
Tkachenko, V.F.
Puzikov, V.M.
title_short Research of Structural Quality of Big-Size KDP Crystals
title_full Research of Structural Quality of Big-Size KDP Crystals
title_fullStr Research of Structural Quality of Big-Size KDP Crystals
title_full_unstemmed Research of Structural Quality of Big-Size KDP Crystals
title_sort research of structural quality of big-size kdp crystals
author Salo, V.I.
Tkachenko, V.F.
Puzikov, V.M.
author_facet Salo, V.I.
Tkachenko, V.F.
Puzikov, V.M.
publishDate 2008
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The faulted structure formation at a rapid growing of big-size KDP crystals has been analyzed. A transitional zone with high degree of lattice faultness has been revealed between the seed and the pure zone of the grown crystal by X-ray diffraction methods with high resolution. It has been determined that, regardless of the seed form, the transitional layer in grown crystals reaches the value of~12 mm. The nonmonotone variation of the crystal lattice parameter (∆d/d) within ±2.5·10⁻⁵ and the halfwidth of a diffraction reflection curve (β = 5.5÷8 arcs for direction [103] and β = 7÷9 arcs for direction [100]) and the increase of the integral power of reflection of the X-ray beam IR by 1.5 times are observed in the transitional lay
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118853
citation_txt Research of Structural Quality of Big-Size KDP Crystals / V. I. Salo, V. F. Tkachenko, V.M. Puzikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 132-135. — Бібліогр.: 7 назв. — англ.
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first_indexed 2025-11-30T21:55:33Z
last_indexed 2025-11-30T21:55:33Z
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