Direct current transport mechanisms in n-InSe/p-CdTe heterostructure

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2008
• Hauptverfasser: Gorley, P.M., Prokopenko, I.V., Grushka, Z.M., Makhniy, V.P., Grushka, O.G., Chervinsky, O.A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118856
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Direct current transport mechanisms in n-InSe/p-CdTe heterostructure / P.M. Gorley, I.V. Prokopenko, Z.M. Grushka, V.P. Makhniy, O.G. Grushka, O.A. Chervinsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 124-131. — Бібліогр.: 34 назв. — англ.

The authors created n-InSe/p-CdTe heterojunction by deposition over optical
 contact, investigated temperature evolution of its current-voltage dependences under the
 forward bias, and determined the prevailing current transport mechanisms in the
 structure. It was shown that misfit dislocations at the boundary between the
 semiconductors form a stable periodic structure acting as slow recombination centers for
 the carriers. The properties of the material suggest promising application perspectives for
 n-InSe/p-CdTe heterojunction, especially for the devices working at high temperatures
 and elevated radiation.