Direct current transport mechanisms in n-InSe/p-CdTe heterostructure
The authors created n-InSe/p-CdTe heterojunction by deposition over optical contact, investigated temperature evolution of its current-voltage dependences under the forward bias, and determined the prevailing current transport mechanisms in the structure. It was shown that misfit dislocations at...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2008 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118856 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Direct current transport mechanisms in n-InSe/p-CdTe heterostructure / P.M. Gorley, I.V. Prokopenko, Z.M. Grushka, V.P. Makhniy, O.G. Grushka, O.A. Chervinsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 124-131. — Бібліогр.: 34 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118856 |
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dspace |
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Gorley, P.M. Prokopenko, I.V. Grushka, Z.M. Makhniy, V.P. Grushka, O.G. Chervinsky, O.A. 2017-05-31T19:29:18Z 2017-05-31T19:29:18Z 2008 Direct current transport mechanisms in n-InSe/p-CdTe heterostructure / P.M. Gorley, I.V. Prokopenko, Z.M. Grushka, V.P. Makhniy, O.G. Grushka, O.A. Chervinsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 124-131. — Бібліогр.: 34 назв. — англ. 1560-8034 PACS 73.40.Cg, Gk, Lq https://nasplib.isofts.kiev.ua/handle/123456789/118856 The authors created n-InSe/p-CdTe heterojunction by deposition over optical contact, investigated temperature evolution of its current-voltage dependences under the forward bias, and determined the prevailing current transport mechanisms in the structure. It was shown that misfit dislocations at the boundary between the semiconductors form a stable periodic structure acting as slow recombination centers for the carriers. The properties of the material suggest promising application perspectives for n-InSe/p-CdTe heterojunction, especially for the devices working at high temperatures and elevated radiation. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Direct current transport mechanisms in n-InSe/p-CdTe heterostructure Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Direct current transport mechanisms in n-InSe/p-CdTe heterostructure |
| spellingShingle |
Direct current transport mechanisms in n-InSe/p-CdTe heterostructure Gorley, P.M. Prokopenko, I.V. Grushka, Z.M. Makhniy, V.P. Grushka, O.G. Chervinsky, O.A. |
| title_short |
Direct current transport mechanisms in n-InSe/p-CdTe heterostructure |
| title_full |
Direct current transport mechanisms in n-InSe/p-CdTe heterostructure |
| title_fullStr |
Direct current transport mechanisms in n-InSe/p-CdTe heterostructure |
| title_full_unstemmed |
Direct current transport mechanisms in n-InSe/p-CdTe heterostructure |
| title_sort |
direct current transport mechanisms in n-inse/p-cdte heterostructure |
| author |
Gorley, P.M. Prokopenko, I.V. Grushka, Z.M. Makhniy, V.P. Grushka, O.G. Chervinsky, O.A. |
| author_facet |
Gorley, P.M. Prokopenko, I.V. Grushka, Z.M. Makhniy, V.P. Grushka, O.G. Chervinsky, O.A. |
| publishDate |
2008 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The authors created n-InSe/p-CdTe heterojunction by deposition over optical
contact, investigated temperature evolution of its current-voltage dependences under the
forward bias, and determined the prevailing current transport mechanisms in the
structure. It was shown that misfit dislocations at the boundary between the
semiconductors form a stable periodic structure acting as slow recombination centers for
the carriers. The properties of the material suggest promising application perspectives for
n-InSe/p-CdTe heterojunction, especially for the devices working at high temperatures
and elevated radiation.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118856 |
| citation_txt |
Direct current transport mechanisms in n-InSe/p-CdTe heterostructure / P.M. Gorley, I.V. Prokopenko, Z.M. Grushka, V.P. Makhniy, O.G. Grushka, O.A. Chervinsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 124-131. — Бібліогр.: 34 назв. — англ. |
| work_keys_str_mv |
AT gorleypm directcurrenttransportmechanismsinninsepcdteheterostructure AT prokopenkoiv directcurrenttransportmechanismsinninsepcdteheterostructure AT grushkazm directcurrenttransportmechanismsinninsepcdteheterostructure AT makhniyvp directcurrenttransportmechanismsinninsepcdteheterostructure AT grushkaog directcurrenttransportmechanismsinninsepcdteheterostructure AT chervinskyoa directcurrenttransportmechanismsinninsepcdteheterostructure |
| first_indexed |
2025-12-07T19:29:22Z |
| last_indexed |
2025-12-07T19:29:22Z |
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1850878997083193344 |