Direct current transport mechanisms in n-InSe/p-CdTe heterostructure
The authors created n-InSe/p-CdTe heterojunction by deposition over optical
 contact, investigated temperature evolution of its current-voltage dependences under the
 forward bias, and determined the prevailing current transport mechanisms in the
 structure. It was shown that...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2008 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118856 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Direct current transport mechanisms in n-InSe/p-CdTe heterostructure / P.M. Gorley, I.V. Prokopenko, Z.M. Grushka, V.P. Makhniy, O.G. Grushka, O.A. Chervinsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 124-131. — Бібліогр.: 34 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862732060360179712 |
|---|---|
| author | Gorley, P.M. Prokopenko, I.V. Grushka, Z.M. Makhniy, V.P. Grushka, O.G. Chervinsky, O.A. |
| author_facet | Gorley, P.M. Prokopenko, I.V. Grushka, Z.M. Makhniy, V.P. Grushka, O.G. Chervinsky, O.A. |
| citation_txt | Direct current transport mechanisms in n-InSe/p-CdTe heterostructure / P.M. Gorley, I.V. Prokopenko, Z.M. Grushka, V.P. Makhniy, O.G. Grushka, O.A. Chervinsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 124-131. — Бібліогр.: 34 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The authors created n-InSe/p-CdTe heterojunction by deposition over optical
contact, investigated temperature evolution of its current-voltage dependences under the
forward bias, and determined the prevailing current transport mechanisms in the
structure. It was shown that misfit dislocations at the boundary between the
semiconductors form a stable periodic structure acting as slow recombination centers for
the carriers. The properties of the material suggest promising application perspectives for
n-InSe/p-CdTe heterojunction, especially for the devices working at high temperatures
and elevated radiation.
|
| first_indexed | 2025-12-07T19:29:22Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118856 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:29:22Z |
| publishDate | 2008 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Gorley, P.M. Prokopenko, I.V. Grushka, Z.M. Makhniy, V.P. Grushka, O.G. Chervinsky, O.A. 2017-05-31T19:29:18Z 2017-05-31T19:29:18Z 2008 Direct current transport mechanisms in n-InSe/p-CdTe heterostructure / P.M. Gorley, I.V. Prokopenko, Z.M. Grushka, V.P. Makhniy, O.G. Grushka, O.A. Chervinsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 124-131. — Бібліогр.: 34 назв. — англ. 1560-8034 PACS 73.40.Cg, Gk, Lq https://nasplib.isofts.kiev.ua/handle/123456789/118856 The authors created n-InSe/p-CdTe heterojunction by deposition over optical
 contact, investigated temperature evolution of its current-voltage dependences under the
 forward bias, and determined the prevailing current transport mechanisms in the
 structure. It was shown that misfit dislocations at the boundary between the
 semiconductors form a stable periodic structure acting as slow recombination centers for
 the carriers. The properties of the material suggest promising application perspectives for
 n-InSe/p-CdTe heterojunction, especially for the devices working at high temperatures
 and elevated radiation. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Direct current transport mechanisms in n-InSe/p-CdTe heterostructure Article published earlier |
| spellingShingle | Direct current transport mechanisms in n-InSe/p-CdTe heterostructure Gorley, P.M. Prokopenko, I.V. Grushka, Z.M. Makhniy, V.P. Grushka, O.G. Chervinsky, O.A. |
| title | Direct current transport mechanisms in n-InSe/p-CdTe heterostructure |
| title_full | Direct current transport mechanisms in n-InSe/p-CdTe heterostructure |
| title_fullStr | Direct current transport mechanisms in n-InSe/p-CdTe heterostructure |
| title_full_unstemmed | Direct current transport mechanisms in n-InSe/p-CdTe heterostructure |
| title_short | Direct current transport mechanisms in n-InSe/p-CdTe heterostructure |
| title_sort | direct current transport mechanisms in n-inse/p-cdte heterostructure |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118856 |
| work_keys_str_mv | AT gorleypm directcurrenttransportmechanismsinninsepcdteheterostructure AT prokopenkoiv directcurrenttransportmechanismsinninsepcdteheterostructure AT grushkazm directcurrenttransportmechanismsinninsepcdteheterostructure AT makhniyvp directcurrenttransportmechanismsinninsepcdteheterostructure AT grushkaog directcurrenttransportmechanismsinninsepcdteheterostructure AT chervinskyoa directcurrenttransportmechanismsinninsepcdteheterostructure |