Numerical study of electrical characteristics of conjugated polymer light-emitting diodes
Conjugated polymers now provide a class of processible, film-forming semiconductors and metals. In this work, the electronic properties of polymer lightemitting diodes devices are numerically studied. Our results show how an insulating buffer layer with suitable thickness decreases the barrier he...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2008 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118859 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Numerical study of electrical characteristics of conjugated polymer light-emitting diodes / D. Abouelaoualim, M. Assouag, A. Elmidaoui // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 151-153. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Conjugated polymers now provide a class of processible, film-forming
semiconductors and metals. In this work, the electronic properties of polymer lightemitting
diodes devices are numerically studied. Our results show how an insulating
buffer layer with suitable thickness decreases the barrier height at the cathode and
therefore increases the electron injection. We also discuss the effects from persistent
charged traps.
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| ISSN: | 1560-8034 |