Electron-electron drag in crystals with multivalley band
Mobility of electrons in multivalley bands of Si and Ge is considered with due
 regard for intervalley drag. It is shown that drag sufficiently diminishes electron mobility
 at low temperatures. This effect is clearer pronounced in germanium than in silicon.
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2009 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118864 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electron-electron drag in crystals with multivalley band / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 212-217. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862529933001097216 |
|---|---|
| author | Boiko, I.I. |
| author_facet | Boiko, I.I. |
| citation_txt | Electron-electron drag in crystals with multivalley band / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 212-217. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Mobility of electrons in multivalley bands of Si and Ge is considered with due
regard for intervalley drag. It is shown that drag sufficiently diminishes electron mobility
at low temperatures. This effect is clearer pronounced in germanium than in silicon.
|
| first_indexed | 2025-11-24T02:23:46Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118864 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T02:23:46Z |
| publishDate | 2009 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Boiko, I.I. 2017-05-31T19:39:08Z 2017-05-31T19:39:08Z 2009 Electron-electron drag in crystals with multivalley band / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 212-217. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 61.72, 72.20 https://nasplib.isofts.kiev.ua/handle/123456789/118864 Mobility of electrons in multivalley bands of Si and Ge is considered with due
 regard for intervalley drag. It is shown that drag sufficiently diminishes electron mobility
 at low temperatures. This effect is clearer pronounced in germanium than in silicon. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electron-electron drag in crystals with multivalley band Article published earlier |
| spellingShingle | Electron-electron drag in crystals with multivalley band Boiko, I.I. |
| title | Electron-electron drag in crystals with multivalley band |
| title_full | Electron-electron drag in crystals with multivalley band |
| title_fullStr | Electron-electron drag in crystals with multivalley band |
| title_full_unstemmed | Electron-electron drag in crystals with multivalley band |
| title_short | Electron-electron drag in crystals with multivalley band |
| title_sort | electron-electron drag in crystals with multivalley band |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118864 |
| work_keys_str_mv | AT boikoii electronelectrondragincrystalswithmultivalleyband |