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Electron-electron drag in crystals with multivalley band

Mobility of electrons in multivalley bands of Si and Ge is considered with due regard for intervalley drag. It is shown that drag sufficiently diminishes electron mobility at low temperatures. This effect is clearer pronounced in germanium than in silicon.

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Bibliographic Details
Published in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Date:	2009
Main Author:	Boiko, I.I.
Format:	Article
Language:	English
Published:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/118864
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Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	Electron-electron drag in crystals with multivalley band / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 212-217. — Бібліогр.: 8 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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