Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2009
• Main Authors: Rubish, V.M., Gera, E.B., Pop, M.M., Maryan, V.M., Kostyukevych, S.O., Moskalenko, N.L., Semak, D.G., Kostyukevych, K.V., Kryuchin, A.A., Petrov, V.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118869
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers / V.M. Rubish, E.B. Gera, M.M. Pop, V.M. Maryan, S.O. Kostyukevych, N.L. Moskalenko, D.G. Semak, K.V. Kostyukevych, A.A. Kryuchin, V.V. Petrov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 251-254. — Бібліогр.: 15 назв. — англ.

The results of investigation of the As₄₀-xSbxS₆₀ (x = 0-10) thin films
 transmission spectra depending on exposure and heat treatment conditions are given. It
 was established that illumination and annealing of films leads to the absorption edge shift
 into the longwave spectral region. The values of pseudogap width Eg are determined.
 Optical characteristic changes of films are caused by photo-thermostructural
 transformations taking place in them under irradiation and annealing.