Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers

Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers

The results of investigation of the As₄₀-xSbxS₆₀ (x = 0-10) thin films transmission spectra depending on exposure and heat treatment conditions are given. It was established that illumination and annealing of films leads to the absorption edge shift into the longwave spectral region. The values o...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2009
Hauptverfasser: Rubish, V.M., Gera, E.B., Pop, M.M., Maryan, V.M., Kostyukevych, S.O., Moskalenko, N.L., Semak, D.G., Kostyukevych, K.V., Kryuchin, A.A., Petrov, V.V.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118869
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers / V.M. Rubish, E.B. Gera, M.M. Pop, V.M. Maryan, S.O. Kostyukevych, N.L. Moskalenko, D.G. Semak, K.V. Kostyukevych, A.A. Kryuchin, V.V. Petrov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 251-254. — Бібліогр.: 15 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118869
record_format dspace
spelling Rubish, V.M.
Gera, E.B.
Pop, M.M.
Maryan, V.M.
Kostyukevych, S.O.
Moskalenko, N.L.
Semak, D.G.
Kostyukevych, K.V.
Kryuchin, A.A.
Petrov, V.V.
2017-05-31T19:43:57Z
2017-05-31T19:43:57Z
2009
Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers / V.M. Rubish, E.B. Gera, M.M. Pop, V.M. Maryan, S.O. Kostyukevych, N.L. Moskalenko, D.G. Semak, K.V. Kostyukevych, A.A. Kryuchin, V.V. Petrov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 251-254. — Бібліогр.: 15 назв. — англ.
1560-8034
PACS 78.66.Jg
https://nasplib.isofts.kiev.ua/handle/123456789/118869
The results of investigation of the As₄₀-xSbxS₆₀ (x = 0-10) thin films transmission spectra depending on exposure and heat treatment conditions are given. It was established that illumination and annealing of films leads to the absorption edge shift into the longwave spectral region. The values of pseudogap width Eg are determined. Optical characteristic changes of films are caused by photo-thermostructural transformations taking place in them under irradiation and annealing.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers
spellingShingle Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers
Rubish, V.M.
Gera, E.B.
Pop, M.M.
Maryan, V.M.
Kostyukevych, S.O.
Moskalenko, N.L.
Semak, D.G.
Kostyukevych, K.V.
Kryuchin, A.A.
Petrov, V.V.
title_short Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers
title_full Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers
title_fullStr Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers
title_full_unstemmed Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers
title_sort photo-thermoinduced changes of transmission spectra of as₄₀-xsbxs₆₀ amorphous layers
author Rubish, V.M.
Gera, E.B.
Pop, M.M.
Maryan, V.M.
Kostyukevych, S.O.
Moskalenko, N.L.
Semak, D.G.
Kostyukevych, K.V.
Kryuchin, A.A.
Petrov, V.V.
author_facet Rubish, V.M.
Gera, E.B.
Pop, M.M.
Maryan, V.M.
Kostyukevych, S.O.
Moskalenko, N.L.
Semak, D.G.
Kostyukevych, K.V.
Kryuchin, A.A.
Petrov, V.V.
publishDate 2009
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The results of investigation of the As₄₀-xSbxS₆₀ (x = 0-10) thin films transmission spectra depending on exposure and heat treatment conditions are given. It was established that illumination and annealing of films leads to the absorption edge shift into the longwave spectral region. The values of pseudogap width Eg are determined. Optical characteristic changes of films are caused by photo-thermostructural transformations taking place in them under irradiation and annealing.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118869
citation_txt Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers / V.M. Rubish, E.B. Gera, M.M. Pop, V.M. Maryan, S.O. Kostyukevych, N.L. Moskalenko, D.G. Semak, K.V. Kostyukevych, A.A. Kryuchin, V.V. Petrov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 251-254. — Бібліогр.: 15 назв. — англ.
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first_indexed 2025-12-07T18:45:16Z
last_indexed 2025-12-07T18:45:16Z
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