Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers
The results of investigation of the As₄₀-xSbxS₆₀ (x = 0-10) thin films
 transmission spectra depending on exposure and heat treatment conditions are given. It
 was established that illumination and annealing of films leads to the absorption edge shift
 into the longwave spect...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2009 |
| Автори: | , , , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118869 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers / V.M. Rubish, E.B. Gera, M.M. Pop, V.M. Maryan, S.O. Kostyukevych, N.L. Moskalenko, D.G. Semak, K.V. Kostyukevych, A.A. Kryuchin, V.V. Petrov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 251-254. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862724092892807168 |
|---|---|
| author | Rubish, V.M. Gera, E.B. Pop, M.M. Maryan, V.M. Kostyukevych, S.O. Moskalenko, N.L. Semak, D.G. Kostyukevych, K.V. Kryuchin, A.A. Petrov, V.V. |
| author_facet | Rubish, V.M. Gera, E.B. Pop, M.M. Maryan, V.M. Kostyukevych, S.O. Moskalenko, N.L. Semak, D.G. Kostyukevych, K.V. Kryuchin, A.A. Petrov, V.V. |
| citation_txt | Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers / V.M. Rubish, E.B. Gera, M.M. Pop, V.M. Maryan, S.O. Kostyukevych, N.L. Moskalenko, D.G. Semak, K.V. Kostyukevych, A.A. Kryuchin, V.V. Petrov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 251-254. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The results of investigation of the As₄₀-xSbxS₆₀ (x = 0-10) thin films
transmission spectra depending on exposure and heat treatment conditions are given. It
was established that illumination and annealing of films leads to the absorption edge shift
into the longwave spectral region. The values of pseudogap width Eg are determined.
Optical characteristic changes of films are caused by photo-thermostructural
transformations taking place in them under irradiation and annealing.
|
| first_indexed | 2025-12-07T18:45:16Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118869 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:45:16Z |
| publishDate | 2009 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Rubish, V.M. Gera, E.B. Pop, M.M. Maryan, V.M. Kostyukevych, S.O. Moskalenko, N.L. Semak, D.G. Kostyukevych, K.V. Kryuchin, A.A. Petrov, V.V. 2017-05-31T19:43:57Z 2017-05-31T19:43:57Z 2009 Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers / V.M. Rubish, E.B. Gera, M.M. Pop, V.M. Maryan, S.O. Kostyukevych, N.L. Moskalenko, D.G. Semak, K.V. Kostyukevych, A.A. Kryuchin, V.V. Petrov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 251-254. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 78.66.Jg https://nasplib.isofts.kiev.ua/handle/123456789/118869 The results of investigation of the As₄₀-xSbxS₆₀ (x = 0-10) thin films
 transmission spectra depending on exposure and heat treatment conditions are given. It
 was established that illumination and annealing of films leads to the absorption edge shift
 into the longwave spectral region. The values of pseudogap width Eg are determined.
 Optical characteristic changes of films are caused by photo-thermostructural
 transformations taking place in them under irradiation and annealing. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers Article published earlier |
| spellingShingle | Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers Rubish, V.M. Gera, E.B. Pop, M.M. Maryan, V.M. Kostyukevych, S.O. Moskalenko, N.L. Semak, D.G. Kostyukevych, K.V. Kryuchin, A.A. Petrov, V.V. |
| title | Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers |
| title_full | Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers |
| title_fullStr | Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers |
| title_full_unstemmed | Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers |
| title_short | Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers |
| title_sort | photo-thermoinduced changes of transmission spectra of as₄₀-xsbxs₆₀ amorphous layers |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118869 |
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