Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID)

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2009
• 1. Verfasser: Eladl, Sh.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118870
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Modeling of photons trapping effect on the performance
 of HPT-LED Optoelectronic Integrated Device (OEID) / Sh.M. Eladl // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 255-259. — Бібліогр.: 11 назв. — англ.

The effect of photons trapped at the LED side due to total internal reflection
 on the transient behavior of an Optoelectronic Integrated Device (OEID) is considered in
 this paper. The device is composed of a Heterojunction Phototransistor (HPT) and a
 Light Emitting Diode (LED). The expressions describing the transient response of the
 output photons flux, the rise time, and the output derivative are derived. The effect of the
 various device parameters on the transient response is outlined. The results show that the
 transient response of these types of devices is strongly dependent on the ratio of these
 trapped photons in the LED part. Also the device under consideration can be changed
 from switching mode to the amplification mode, if the fractions of trapped photons
 exceed a specified value. This type of the model can be exploited as an optical amplifier,
 optical switching device and other applications.