Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID)
The effect of photons trapped at the LED side due to total internal reflection
 on the transient behavior of an Optoelectronic Integrated Device (OEID) is considered in
 this paper. The device is composed of a Heterojunction Phototransistor (HPT) and a
 Light Emitting Diode (...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2009 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118870 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Modeling of photons trapping effect on the performance
 of HPT-LED Optoelectronic Integrated Device (OEID) / Sh.M. Eladl // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 255-259. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862665305126338560 |
|---|---|
| author | Eladl, Sh.M. |
| author_facet | Eladl, Sh.M. |
| citation_txt | Modeling of photons trapping effect on the performance
 of HPT-LED Optoelectronic Integrated Device (OEID) / Sh.M. Eladl // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 255-259. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The effect of photons trapped at the LED side due to total internal reflection
on the transient behavior of an Optoelectronic Integrated Device (OEID) is considered in
this paper. The device is composed of a Heterojunction Phototransistor (HPT) and a
Light Emitting Diode (LED). The expressions describing the transient response of the
output photons flux, the rise time, and the output derivative are derived. The effect of the
various device parameters on the transient response is outlined. The results show that the
transient response of these types of devices is strongly dependent on the ratio of these
trapped photons in the LED part. Also the device under consideration can be changed
from switching mode to the amplification mode, if the fractions of trapped photons
exceed a specified value. This type of the model can be exploited as an optical amplifier,
optical switching device and other applications.
|
| first_indexed | 2025-12-07T15:16:15Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118870 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:16:15Z |
| publishDate | 2009 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Eladl, Sh.M. 2017-05-31T19:44:34Z 2017-05-31T19:44:34Z 2009 Modeling of photons trapping effect on the performance
 of HPT-LED Optoelectronic Integrated Device (OEID) / Sh.M. Eladl // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 255-259. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 85.60.-q, Dw, Jb https://nasplib.isofts.kiev.ua/handle/123456789/118870 The effect of photons trapped at the LED side due to total internal reflection
 on the transient behavior of an Optoelectronic Integrated Device (OEID) is considered in
 this paper. The device is composed of a Heterojunction Phototransistor (HPT) and a
 Light Emitting Diode (LED). The expressions describing the transient response of the
 output photons flux, the rise time, and the output derivative are derived. The effect of the
 various device parameters on the transient response is outlined. The results show that the
 transient response of these types of devices is strongly dependent on the ratio of these
 trapped photons in the LED part. Also the device under consideration can be changed
 from switching mode to the amplification mode, if the fractions of trapped photons
 exceed a specified value. This type of the model can be exploited as an optical amplifier,
 optical switching device and other applications. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID) Article published earlier |
| spellingShingle | Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID) Eladl, Sh.M. |
| title | Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID) |
| title_full | Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID) |
| title_fullStr | Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID) |
| title_full_unstemmed | Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID) |
| title_short | Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID) |
| title_sort | modeling of photons trapping effect on the performance of hpt-led optoelectronic integrated device (oeid) |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118870 |
| work_keys_str_mv | AT eladlshm modelingofphotonstrappingeffectontheperformanceofhptledoptoelectronicintegrateddeviceoeid |