Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID)
The effect of photons trapped at the LED side due to total internal reflection on the transient behavior of an Optoelectronic Integrated Device (OEID) is considered in this paper. The device is composed of a Heterojunction Phototransistor (HPT) and a Light Emitting Diode (LED). The expressions de...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2009 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118870 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID) / Sh.M. Eladl // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 255-259. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118870 |
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Eladl, Sh.M. 2017-05-31T19:44:34Z 2017-05-31T19:44:34Z 2009 Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID) / Sh.M. Eladl // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 255-259. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 85.60.-q, Dw, Jb https://nasplib.isofts.kiev.ua/handle/123456789/118870 The effect of photons trapped at the LED side due to total internal reflection on the transient behavior of an Optoelectronic Integrated Device (OEID) is considered in this paper. The device is composed of a Heterojunction Phototransistor (HPT) and a Light Emitting Diode (LED). The expressions describing the transient response of the output photons flux, the rise time, and the output derivative are derived. The effect of the various device parameters on the transient response is outlined. The results show that the transient response of these types of devices is strongly dependent on the ratio of these trapped photons in the LED part. Also the device under consideration can be changed from switching mode to the amplification mode, if the fractions of trapped photons exceed a specified value. This type of the model can be exploited as an optical amplifier, optical switching device and other applications. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID) Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID) |
| spellingShingle |
Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID) Eladl, Sh.M. |
| title_short |
Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID) |
| title_full |
Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID) |
| title_fullStr |
Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID) |
| title_full_unstemmed |
Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID) |
| title_sort |
modeling of photons trapping effect on the performance of hpt-led optoelectronic integrated device (oeid) |
| author |
Eladl, Sh.M. |
| author_facet |
Eladl, Sh.M. |
| publishDate |
2009 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The effect of photons trapped at the LED side due to total internal reflection
on the transient behavior of an Optoelectronic Integrated Device (OEID) is considered in
this paper. The device is composed of a Heterojunction Phototransistor (HPT) and a
Light Emitting Diode (LED). The expressions describing the transient response of the
output photons flux, the rise time, and the output derivative are derived. The effect of the
various device parameters on the transient response is outlined. The results show that the
transient response of these types of devices is strongly dependent on the ratio of these
trapped photons in the LED part. Also the device under consideration can be changed
from switching mode to the amplification mode, if the fractions of trapped photons
exceed a specified value. This type of the model can be exploited as an optical amplifier,
optical switching device and other applications.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118870 |
| citation_txt |
Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID) / Sh.M. Eladl // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 255-259. — Бібліогр.: 11 назв. — англ. |
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2025-12-07T15:16:15Z |
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2025-12-07T15:16:15Z |
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