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Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID)

The effect of photons trapped at the LED side due to total internal reflection on the transient behavior of an Optoelectronic Integrated Device (OEID) is considered in this paper. The device is composed of a Heterojunction Phototransistor (HPT) and a Light Emitting Diode (LED). The expressions de...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2009
Main Author: Eladl, Sh.M.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118870
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID) / Sh.M. Eladl // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 255-259. — Бібліогр.: 11 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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