Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2009
• Hauptverfasser: Eladl, Sh.M., Nasr, A., Aboshosha, A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118871
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Dynamic characteristics of QWIP-HBT-LED
 optoelectronic integrated devices /Sh.M. Eladl, A. Nasr, and A. Aboshosha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 260-263. — Бібліогр.: 9 назв. — англ.

This paper presents an evaluation of the transient performance of an
 optoelectronic integrated device. This device is composed of a quantum well infrared
 photodetector (QWIP), a heterojunction bipolar transistor (HBT) and a light emitting
 diode (LED). It is called as QWIP-HBT-LED optoelectronic integrated device.
 Evaluation of its transient response is based on the frequency response of the constituent
 devices. Analytical expressions describing the transient behavior, output derivative as a
 measure of speed, and the rise time are derived. The numerical results show that the
 transient performance of the version under consideration is mainly based on the
 individual quantum efficiencies and is improved with their growth. The device speed and
 rise time are enhanced with the increase of the cut-off frequency of HBT.