Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices
This paper presents an evaluation of the transient performance of an optoelectronic integrated device. This device is composed of a quantum well infrared photodetector (QWIP), a heterojunction bipolar transistor (HBT) and a light emitting diode (LED). It is called as QWIP-HBT-LED optoelectronic i...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2009 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118871 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices /Sh.M. Eladl, A. Nasr, and A. Aboshosha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 260-263. — Бібліогр.: 9 назв. — англ. |
Репозитарії
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nasplib_isofts_kiev_ua-123456789-118871 |
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Eladl, Sh.M. Nasr, A. Aboshosha, A. 2017-05-31T19:45:16Z 2017-05-31T19:45:16Z 2009 Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices /Sh.M. Eladl, A. Nasr, and A. Aboshosha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 260-263. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 85.60.-q, Dw, Jb https://nasplib.isofts.kiev.ua/handle/123456789/118871 This paper presents an evaluation of the transient performance of an optoelectronic integrated device. This device is composed of a quantum well infrared photodetector (QWIP), a heterojunction bipolar transistor (HBT) and a light emitting diode (LED). It is called as QWIP-HBT-LED optoelectronic integrated device. Evaluation of its transient response is based on the frequency response of the constituent devices. Analytical expressions describing the transient behavior, output derivative as a measure of speed, and the rise time are derived. The numerical results show that the transient performance of the version under consideration is mainly based on the individual quantum efficiencies and is improved with their growth. The device speed and rise time are enhanced with the increase of the cut-off frequency of HBT. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices |
| spellingShingle |
Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices Eladl, Sh.M. Nasr, A. Aboshosha, A. |
| title_short |
Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices |
| title_full |
Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices |
| title_fullStr |
Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices |
| title_full_unstemmed |
Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices |
| title_sort |
dynamic characteristics of qwip-hbt-led optoelectronic integrated devices |
| author |
Eladl, Sh.M. Nasr, A. Aboshosha, A. |
| author_facet |
Eladl, Sh.M. Nasr, A. Aboshosha, A. |
| publishDate |
2009 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
This paper presents an evaluation of the transient performance of an
optoelectronic integrated device. This device is composed of a quantum well infrared
photodetector (QWIP), a heterojunction bipolar transistor (HBT) and a light emitting
diode (LED). It is called as QWIP-HBT-LED optoelectronic integrated device.
Evaluation of its transient response is based on the frequency response of the constituent
devices. Analytical expressions describing the transient behavior, output derivative as a
measure of speed, and the rise time are derived. The numerical results show that the
transient performance of the version under consideration is mainly based on the
individual quantum efficiencies and is improved with their growth. The device speed and
rise time are enhanced with the increase of the cut-off frequency of HBT.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118871 |
| citation_txt |
Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices /Sh.M. Eladl, A. Nasr, and A. Aboshosha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 260-263. — Бібліогр.: 9 назв. — англ. |
| work_keys_str_mv |
AT eladlshm dynamiccharacteristicsofqwiphbtledoptoelectronicintegrateddevices AT nasra dynamiccharacteristicsofqwiphbtledoptoelectronicintegrateddevices AT aboshoshaa dynamiccharacteristicsofqwiphbtledoptoelectronicintegrateddevices |
| first_indexed |
2025-12-07T13:20:26Z |
| last_indexed |
2025-12-07T13:20:26Z |
| _version_ |
1850855785741942784 |