Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices
This paper presents an evaluation of the transient performance of an
 optoelectronic integrated device. This device is composed of a quantum well infrared
 photodetector (QWIP), a heterojunction bipolar transistor (HBT) and a light emitting
 diode (LED). It is called as QWIP-...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2009 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118871 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Dynamic characteristics of QWIP-HBT-LED
 optoelectronic integrated devices /Sh.M. Eladl, A. Nasr, and A. Aboshosha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 260-263. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862620049163943936 |
|---|---|
| author | Eladl, Sh.M. Nasr, A. Aboshosha, A. |
| author_facet | Eladl, Sh.M. Nasr, A. Aboshosha, A. |
| citation_txt | Dynamic characteristics of QWIP-HBT-LED
 optoelectronic integrated devices /Sh.M. Eladl, A. Nasr, and A. Aboshosha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 260-263. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | This paper presents an evaluation of the transient performance of an
optoelectronic integrated device. This device is composed of a quantum well infrared
photodetector (QWIP), a heterojunction bipolar transistor (HBT) and a light emitting
diode (LED). It is called as QWIP-HBT-LED optoelectronic integrated device.
Evaluation of its transient response is based on the frequency response of the constituent
devices. Analytical expressions describing the transient behavior, output derivative as a
measure of speed, and the rise time are derived. The numerical results show that the
transient performance of the version under consideration is mainly based on the
individual quantum efficiencies and is improved with their growth. The device speed and
rise time are enhanced with the increase of the cut-off frequency of HBT.
|
| first_indexed | 2025-12-07T13:20:26Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118871 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T13:20:26Z |
| publishDate | 2009 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Eladl, Sh.M. Nasr, A. Aboshosha, A. 2017-05-31T19:45:16Z 2017-05-31T19:45:16Z 2009 Dynamic characteristics of QWIP-HBT-LED
 optoelectronic integrated devices /Sh.M. Eladl, A. Nasr, and A. Aboshosha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 260-263. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 85.60.-q, Dw, Jb https://nasplib.isofts.kiev.ua/handle/123456789/118871 This paper presents an evaluation of the transient performance of an
 optoelectronic integrated device. This device is composed of a quantum well infrared
 photodetector (QWIP), a heterojunction bipolar transistor (HBT) and a light emitting
 diode (LED). It is called as QWIP-HBT-LED optoelectronic integrated device.
 Evaluation of its transient response is based on the frequency response of the constituent
 devices. Analytical expressions describing the transient behavior, output derivative as a
 measure of speed, and the rise time are derived. The numerical results show that the
 transient performance of the version under consideration is mainly based on the
 individual quantum efficiencies and is improved with their growth. The device speed and
 rise time are enhanced with the increase of the cut-off frequency of HBT. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices Article published earlier |
| spellingShingle | Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices Eladl, Sh.M. Nasr, A. Aboshosha, A. |
| title | Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices |
| title_full | Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices |
| title_fullStr | Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices |
| title_full_unstemmed | Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices |
| title_short | Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices |
| title_sort | dynamic characteristics of qwip-hbt-led optoelectronic integrated devices |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118871 |
| work_keys_str_mv | AT eladlshm dynamiccharacteristicsofqwiphbtledoptoelectronicintegrateddevices AT nasra dynamiccharacteristicsofqwiphbtledoptoelectronicintegrateddevices AT aboshoshaa dynamiccharacteristicsofqwiphbtledoptoelectronicintegrateddevices |