Electron mobility in CdxHg₁₋xSe
Electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, ionized impurities in CdxHg₁₋xSe (0 ⩽ x ⩽ 0.547) samples annealled in selenium vapour or in dynamic vacuum are considered. Within the...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2009 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118873 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electron mobility in CdxHg₁₋xSe / O.P. Malyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 272-275. — Бібліогр.: 10 назв. — англ. |
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Malyk, O.P. 2017-05-31T19:46:56Z 2017-05-31T19:46:56Z 2009 Electron mobility in CdxHg₁₋xSe / O.P. Malyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 272-275. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 72.10.-d, 72.10.Fk, 72.15.-v https://nasplib.isofts.kiev.ua/handle/123456789/118873 Electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, ionized impurities in CdxHg₁₋xSe (0 ⩽ x ⩽ 0.547) samples annealled in selenium vapour or in dynamic vacuum are considered. Within the framework of the precise solution of the stationary Boltzmann equation on the base of short-range principle, temperature dependences of the electron mobility within the range 4.2 – 300 K are calculated. A good coordination of the theory to experiment in the investigated temperature range is established. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electron mobility in CdxHg₁₋xSe Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Electron mobility in CdxHg₁₋xSe |
| spellingShingle |
Electron mobility in CdxHg₁₋xSe Malyk, O.P. |
| title_short |
Electron mobility in CdxHg₁₋xSe |
| title_full |
Electron mobility in CdxHg₁₋xSe |
| title_fullStr |
Electron mobility in CdxHg₁₋xSe |
| title_full_unstemmed |
Electron mobility in CdxHg₁₋xSe |
| title_sort |
electron mobility in cdxhg₁₋xse |
| author |
Malyk, O.P. |
| author_facet |
Malyk, O.P. |
| publishDate |
2009 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Electron scattering on the short-range potential caused by interaction with
polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain,
ionized impurities in CdxHg₁₋xSe (0 ⩽ x ⩽ 0.547) samples annealled in selenium vapour or
in dynamic vacuum are considered. Within the framework of the precise solution of the
stationary Boltzmann equation on the base of short-range principle, temperature
dependences of the electron mobility within the range 4.2 – 300 K are calculated. A good
coordination of the theory to experiment in the investigated temperature range is
established.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118873 |
| citation_txt |
Electron mobility in CdxHg₁₋xSe / O.P. Malyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 272-275. — Бібліогр.: 10 назв. — англ. |
| work_keys_str_mv |
AT malykop electronmobilityincdxhg1xse |
| first_indexed |
2025-12-01T01:10:10Z |
| last_indexed |
2025-12-01T01:10:10Z |
| _version_ |
1850858973386768384 |