Electron mobility in CdxHg₁₋xSe
Electron scattering on the short-range potential caused by interaction with
 polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain,
 ionized impurities in CdxHg₁₋xSe (0 ⩽ x ⩽ 0.547) samples annealled in selenium vapour or
 in dynamic vacuum are...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2009 |
| Main Author: | |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118873 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electron mobility in CdxHg₁₋xSe / O.P. Malyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 272-275. — Бібліогр.: 10 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862639398142607360 |
|---|---|
| author | Malyk, O.P. |
| author_facet | Malyk, O.P. |
| citation_txt | Electron mobility in CdxHg₁₋xSe / O.P. Malyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 272-275. — Бібліогр.: 10 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Electron scattering on the short-range potential caused by interaction with
polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain,
ionized impurities in CdxHg₁₋xSe (0 ⩽ x ⩽ 0.547) samples annealled in selenium vapour or
in dynamic vacuum are considered. Within the framework of the precise solution of the
stationary Boltzmann equation on the base of short-range principle, temperature
dependences of the electron mobility within the range 4.2 – 300 K are calculated. A good
coordination of the theory to experiment in the investigated temperature range is
established.
|
| first_indexed | 2025-12-01T01:10:10Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118873 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T01:10:10Z |
| publishDate | 2009 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Malyk, O.P. 2017-05-31T19:46:56Z 2017-05-31T19:46:56Z 2009 Electron mobility in CdxHg₁₋xSe / O.P. Malyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 272-275. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 72.10.-d, 72.10.Fk, 72.15.-v https://nasplib.isofts.kiev.ua/handle/123456789/118873 Electron scattering on the short-range potential caused by interaction with
 polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain,
 ionized impurities in CdxHg₁₋xSe (0 ⩽ x ⩽ 0.547) samples annealled in selenium vapour or
 in dynamic vacuum are considered. Within the framework of the precise solution of the
 stationary Boltzmann equation on the base of short-range principle, temperature
 dependences of the electron mobility within the range 4.2 – 300 K are calculated. A good
 coordination of the theory to experiment in the investigated temperature range is
 established. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electron mobility in CdxHg₁₋xSe Article published earlier |
| spellingShingle | Electron mobility in CdxHg₁₋xSe Malyk, O.P. |
| title | Electron mobility in CdxHg₁₋xSe |
| title_full | Electron mobility in CdxHg₁₋xSe |
| title_fullStr | Electron mobility in CdxHg₁₋xSe |
| title_full_unstemmed | Electron mobility in CdxHg₁₋xSe |
| title_short | Electron mobility in CdxHg₁₋xSe |
| title_sort | electron mobility in cdxhg₁₋xse |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118873 |
| work_keys_str_mv | AT malykop electronmobilityincdxhg1xse |