Electron mobility in CdxHg₁₋xSe

Electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, ionized impurities in CdxHg₁₋xSe (0 ⩽ x ⩽ 0.547) samples annealled in selenium vapour or in dynamic vacuum are considered. Within the...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2009
1. Verfasser: Malyk, O.P.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118873
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Electron mobility in CdxHg₁₋xSe / O.P. Malyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 272-275. — Бібліогр.: 10 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118873
record_format dspace
spelling Malyk, O.P.
2017-05-31T19:46:56Z
2017-05-31T19:46:56Z
2009
Electron mobility in CdxHg₁₋xSe / O.P. Malyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 272-275. — Бібліогр.: 10 назв. — англ.
1560-8034
PACS 72.10.-d, 72.10.Fk, 72.15.-v
https://nasplib.isofts.kiev.ua/handle/123456789/118873
Electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, ionized impurities in CdxHg₁₋xSe (0 ⩽ x ⩽ 0.547) samples annealled in selenium vapour or in dynamic vacuum are considered. Within the framework of the precise solution of the stationary Boltzmann equation on the base of short-range principle, temperature dependences of the electron mobility within the range 4.2 – 300 K are calculated. A good coordination of the theory to experiment in the investigated temperature range is established.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Electron mobility in CdxHg₁₋xSe
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Electron mobility in CdxHg₁₋xSe
spellingShingle Electron mobility in CdxHg₁₋xSe
Malyk, O.P.
title_short Electron mobility in CdxHg₁₋xSe
title_full Electron mobility in CdxHg₁₋xSe
title_fullStr Electron mobility in CdxHg₁₋xSe
title_full_unstemmed Electron mobility in CdxHg₁₋xSe
title_sort electron mobility in cdxhg₁₋xse
author Malyk, O.P.
author_facet Malyk, O.P.
publishDate 2009
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, ionized impurities in CdxHg₁₋xSe (0 ⩽ x ⩽ 0.547) samples annealled in selenium vapour or in dynamic vacuum are considered. Within the framework of the precise solution of the stationary Boltzmann equation on the base of short-range principle, temperature dependences of the electron mobility within the range 4.2 – 300 K are calculated. A good coordination of the theory to experiment in the investigated temperature range is established.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118873
citation_txt Electron mobility in CdxHg₁₋xSe / O.P. Malyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 272-275. — Бібліогр.: 10 назв. — англ.
work_keys_str_mv AT malykop electronmobilityincdxhg1xse
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last_indexed 2025-12-01T01:10:10Z
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