Electron mobility in CdxHg₁₋xSe

Electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, ionized impurities in CdxHg₁₋xSe (0 ⩽ x ⩽ 0.547) samples annealled in selenium vapour or in dynamic vacuum are considered. Within the...

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Bibliographic Details
Date:2009
Main Author: Malyk, O.P.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118873
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Electron mobility in CdxHg₁₋xSe / O.P. Malyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 272-275. — Бібліогр.: 10 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine