Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment
We studied the effect of laser treatment on the glass-Si₃N₄-Si-SiO₂ structures. It is shown that laser treatment causes appearance of an additional band in their transmission spectra as well as smearing of grain structure at their surface.
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2009 |
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118876 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment / R.V. Konakova, V.P. Kladko, O.S. Lytvyn, O.B. Okhrimenko, B.G. Konoplev, A.M. Svetlichnyi, V.N. Lissotschenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 284-286. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118876 |
|---|---|
| record_format |
dspace |
| spelling |
Konakova, R.V. Kladko, V.P. Lytvyn, O.S. Okhrimenko, O.B. Konoplev, B.G. Svetlichnyi, A.M. Lissotschenko, V.N. 2017-05-31T19:49:39Z 2017-05-31T19:49:39Z 2009 Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment / R.V. Konakova, V.P. Kladko, O.S. Lytvyn, O.B. Okhrimenko, B.G. Konoplev, A.M. Svetlichnyi, V.N. Lissotschenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 284-286. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 71.20.Nr, 78.40.Fy https://nasplib.isofts.kiev.ua/handle/123456789/118876 We studied the effect of laser treatment on the glass-Si₃N₄-Si-SiO₂ structures. It is shown that laser treatment causes appearance of an additional band in their transmission spectra as well as smearing of grain structure at their surface. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment |
| spellingShingle |
Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment Konakova, R.V. Kladko, V.P. Lytvyn, O.S. Okhrimenko, O.B. Konoplev, B.G. Svetlichnyi, A.M. Lissotschenko, V.N. |
| title_short |
Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment |
| title_full |
Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment |
| title_fullStr |
Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment |
| title_full_unstemmed |
Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment |
| title_sort |
modification of properties of the glass-si₃n₄-si-sio₂ structure at laser treatment |
| author |
Konakova, R.V. Kladko, V.P. Lytvyn, O.S. Okhrimenko, O.B. Konoplev, B.G. Svetlichnyi, A.M. Lissotschenko, V.N. |
| author_facet |
Konakova, R.V. Kladko, V.P. Lytvyn, O.S. Okhrimenko, O.B. Konoplev, B.G. Svetlichnyi, A.M. Lissotschenko, V.N. |
| publishDate |
2009 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
We studied the effect of laser treatment on the glass-Si₃N₄-Si-SiO₂ structures. It is shown that laser treatment causes appearance of an additional band in
their transmission spectra as well as smearing of grain structure at their surface.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118876 |
| fulltext |
|
| citation_txt |
Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment / R.V. Konakova, V.P. Kladko, O.S. Lytvyn, O.B. Okhrimenko, B.G. Konoplev, A.M. Svetlichnyi, V.N. Lissotschenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 284-286. — Бібліогр.: 7 назв. — англ. |
| work_keys_str_mv |
AT konakovarv modificationofpropertiesoftheglasssi3n4sisio2structureatlasertreatment AT kladkovp modificationofpropertiesoftheglasssi3n4sisio2structureatlasertreatment AT lytvynos modificationofpropertiesoftheglasssi3n4sisio2structureatlasertreatment AT okhrimenkoob modificationofpropertiesoftheglasssi3n4sisio2structureatlasertreatment AT konoplevbg modificationofpropertiesoftheglasssi3n4sisio2structureatlasertreatment AT svetlichnyiam modificationofpropertiesoftheglasssi3n4sisio2structureatlasertreatment AT lissotschenkovn modificationofpropertiesoftheglasssi3n4sisio2structureatlasertreatment |
| first_indexed |
2025-11-24T15:15:03Z |
| last_indexed |
2025-11-24T15:15:03Z |
| _version_ |
1850847920393289728 |