Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment

Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment

We studied the effect of laser treatment on the glass-Si₃N₄-Si-SiO₂ structures. It is shown that laser treatment causes appearance of an additional band in their transmission spectra as well as smearing of grain structure at their surface.

Gespeichert in:
Bibliographische Detailangaben
Datum:2009
Hauptverfasser: Konakova, R.V., Kladko, V.P., Lytvyn, O.S., Okhrimenko, O.B., Konoplev, B.G., Svetlichnyi, A.M., Lissotschenko, V.N.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118876
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment / R.V. Konakova, V.P. Kladko, O.S. Lytvyn, O.B. Okhrimenko, B.G. Konoplev, A.M. Svetlichnyi, V.N. Lissotschenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 284-286. — Бібліогр.: 7 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118876
record_format dspace
fulltext
spelling nasplib_isofts_kiev_ua-123456789-1188762025-06-03T16:26:26Z Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment Konakova, R.V. Kladko, V.P. Lytvyn, O.S. Okhrimenko, O.B. Konoplev, B.G. Svetlichnyi, A.M. Lissotschenko, V.N. We studied the effect of laser treatment on the glass-Si₃N₄-Si-SiO₂ structures. It is shown that laser treatment causes appearance of an additional band in their transmission spectra as well as smearing of grain structure at their surface. 2009 Article Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment / R.V. Konakova, V.P. Kladko, O.S. Lytvyn, O.B. Okhrimenko, B.G. Konoplev, A.M. Svetlichnyi, V.N. Lissotschenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 284-286. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 71.20.Nr, 78.40.Fy https://nasplib.isofts.kiev.ua/handle/123456789/118876 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description We studied the effect of laser treatment on the glass-Si₃N₄-Si-SiO₂ structures. It is shown that laser treatment causes appearance of an additional band in their transmission spectra as well as smearing of grain structure at their surface.
format Article
author Konakova, R.V.
Kladko, V.P.
Lytvyn, O.S.
Okhrimenko, O.B.
Konoplev, B.G.
Svetlichnyi, A.M.
Lissotschenko, V.N.
spellingShingle Konakova, R.V.
Kladko, V.P.
Lytvyn, O.S.
Okhrimenko, O.B.
Konoplev, B.G.
Svetlichnyi, A.M.
Lissotschenko, V.N.
Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Konakova, R.V.
Kladko, V.P.
Lytvyn, O.S.
Okhrimenko, O.B.
Konoplev, B.G.
Svetlichnyi, A.M.
Lissotschenko, V.N.
author_sort Konakova, R.V.
title Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment
title_short Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment
title_full Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment
title_fullStr Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment
title_full_unstemmed Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment
title_sort modification of properties of the glass-si₃n₄-si-sio₂ structure at laser treatment
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2009
url https://nasplib.isofts.kiev.ua/handle/123456789/118876
citation_txt Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment / R.V. Konakova, V.P. Kladko, O.S. Lytvyn, O.B. Okhrimenko, B.G. Konoplev, A.M. Svetlichnyi, V.N. Lissotschenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 284-286. — Бібліогр.: 7 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT konakovarv modificationofpropertiesoftheglasssi3n4sisio2structureatlasertreatment
AT kladkovp modificationofpropertiesoftheglasssi3n4sisio2structureatlasertreatment
AT lytvynos modificationofpropertiesoftheglasssi3n4sisio2structureatlasertreatment
AT okhrimenkoob modificationofpropertiesoftheglasssi3n4sisio2structureatlasertreatment
AT konoplevbg modificationofpropertiesoftheglasssi3n4sisio2structureatlasertreatment
AT svetlichnyiam modificationofpropertiesoftheglasssi3n4sisio2structureatlasertreatment
AT lissotschenkovn modificationofpropertiesoftheglasssi3n4sisio2structureatlasertreatment
first_indexed 2025-11-24T15:15:03Z
last_indexed 2025-11-24T15:15:03Z
_version_ 1849685236292517888

Ähnliche Einträge