Structure and electrical properties of In₂Se₃Mn layered crystals
Investigations of the crystalline structure and electrical properties of
 In₂Se₃ 1 wt. %Mn and In₂Se₃ 6 wt. % Mn crystals have been carried out. We have
 found formation of a substitutional solid solution for In₂Se₃ 1 wt. %Mn single crystals as
 well as existence of two ph...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2009 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118878 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Structure and electrical properties of In₂Se₃Mn layered crystals / V.M. Kaminskii, Z.D. Kovalyuk, A.V. Zaslonkin, and V.I. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 290-293. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Investigations of the crystalline structure and electrical properties of
In₂Se₃ 1 wt. %Mn and In₂Se₃ 6 wt. % Mn crystals have been carried out. We have
found formation of a substitutional solid solution for In₂Se₃ 1 wt. %Mn single crystals as
well as existence of two phases (In₂Se₃ and MnIn₂Se₄) in polycrystalline ingots
In₂Se₃ 6 wt. % Mn. Temperature dependences of the conductivities across (σ⊥C) and along
(σ||C) the crystallographic c axis were measured in the range of 80 to 400 K. From the
anisotropy σ⊥C/σ||C of conductivity temperature dependences of the energy barrier value
ΔЕδ between the layers were calculated for the crystals under investigations.
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| ISSN: | 1560-8034 |