Structure and electrical properties of In₂Se₃Mn layered crystals
Investigations of the crystalline structure and electrical properties of In₂Se₃ 1 wt. %Mn and In₂Se₃ 6 wt. % Mn crystals have been carried out. We have found formation of a substitutional solid solution for In₂Se₃ 1 wt. %Mn single crystals as well as existence of two phases (In₂Se₃ and MnIn₂Se...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2009 |
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| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118878 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Structure and electrical properties of In₂Se₃Mn layered crystals / V.M. Kaminskii, Z.D. Kovalyuk, A.V. Zaslonkin, and V.I. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 290-293. — Бібліогр.: 11 назв. — англ. |
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Kaminskii, V.M. Kovalyuk, Z.D. Zaslonkin, A.V. Ivanov, V.I. 2017-05-31T19:53:48Z 2017-05-31T19:53:48Z 2009 Structure and electrical properties of In₂Se₃Mn layered crystals / V.M. Kaminskii, Z.D. Kovalyuk, A.V. Zaslonkin, and V.I. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 290-293. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 72.20.Dp, 72.20.-i, 81.10.Fq https://nasplib.isofts.kiev.ua/handle/123456789/118878 Investigations of the crystalline structure and electrical properties of In₂Se₃ 1 wt. %Mn and In₂Se₃ 6 wt. % Mn crystals have been carried out. We have found formation of a substitutional solid solution for In₂Se₃ 1 wt. %Mn single crystals as well as existence of two phases (In₂Se₃ and MnIn₂Se₄) in polycrystalline ingots In₂Se₃ 6 wt. % Mn. Temperature dependences of the conductivities across (σ⊥C) and along (σ||C) the crystallographic c axis were measured in the range of 80 to 400 K. From the anisotropy σ⊥C/σ||C of conductivity temperature dependences of the energy barrier value ΔЕδ between the layers were calculated for the crystals under investigations. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Structure and electrical properties of In₂Se₃Mn layered crystals Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Structure and electrical properties of In₂Se₃Mn layered crystals |
| spellingShingle |
Structure and electrical properties of In₂Se₃Mn layered crystals Kaminskii, V.M. Kovalyuk, Z.D. Zaslonkin, A.V. Ivanov, V.I. |
| title_short |
Structure and electrical properties of In₂Se₃Mn layered crystals |
| title_full |
Structure and electrical properties of In₂Se₃Mn layered crystals |
| title_fullStr |
Structure and electrical properties of In₂Se₃Mn layered crystals |
| title_full_unstemmed |
Structure and electrical properties of In₂Se₃Mn layered crystals |
| title_sort |
structure and electrical properties of in₂se₃mn layered crystals |
| author |
Kaminskii, V.M. Kovalyuk, Z.D. Zaslonkin, A.V. Ivanov, V.I. |
| author_facet |
Kaminskii, V.M. Kovalyuk, Z.D. Zaslonkin, A.V. Ivanov, V.I. |
| publishDate |
2009 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Investigations of the crystalline structure and electrical properties of
In₂Se₃ 1 wt. %Mn and In₂Se₃ 6 wt. % Mn crystals have been carried out. We have
found formation of a substitutional solid solution for In₂Se₃ 1 wt. %Mn single crystals as
well as existence of two phases (In₂Se₃ and MnIn₂Se₄) in polycrystalline ingots
In₂Se₃ 6 wt. % Mn. Temperature dependences of the conductivities across (σ⊥C) and along
(σ||C) the crystallographic c axis were measured in the range of 80 to 400 K. From the
anisotropy σ⊥C/σ||C of conductivity temperature dependences of the energy barrier value
ΔЕδ between the layers were calculated for the crystals under investigations.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118878 |
| citation_txt |
Structure and electrical properties of In₂Se₃Mn layered crystals / V.M. Kaminskii, Z.D. Kovalyuk, A.V. Zaslonkin, and V.I. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 290-293. — Бібліогр.: 11 назв. — англ. |
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| first_indexed |
2025-12-07T19:27:37Z |
| last_indexed |
2025-12-07T19:27:37Z |
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