Structure and electrical properties of In₂Se₃Mn layered crystals
Investigations of the crystalline structure and electrical properties of
 In₂Se₃ 1 wt. %Mn and In₂Se₃ 6 wt. % Mn crystals have been carried out. We have
 found formation of a substitutional solid solution for In₂Se₃ 1 wt. %Mn single crystals as
 well as existence of two ph...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2009 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118878 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Structure and electrical properties of In₂Se₃Mn layered crystals / V.M. Kaminskii, Z.D. Kovalyuk, A.V. Zaslonkin, and V.I. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 290-293. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862731727293644800 |
|---|---|
| author | Kaminskii, V.M. Kovalyuk, Z.D. Zaslonkin, A.V. Ivanov, V.I. |
| author_facet | Kaminskii, V.M. Kovalyuk, Z.D. Zaslonkin, A.V. Ivanov, V.I. |
| citation_txt | Structure and electrical properties of In₂Se₃Mn layered crystals / V.M. Kaminskii, Z.D. Kovalyuk, A.V. Zaslonkin, and V.I. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 290-293. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Investigations of the crystalline structure and electrical properties of
In₂Se₃ 1 wt. %Mn and In₂Se₃ 6 wt. % Mn crystals have been carried out. We have
found formation of a substitutional solid solution for In₂Se₃ 1 wt. %Mn single crystals as
well as existence of two phases (In₂Se₃ and MnIn₂Se₄) in polycrystalline ingots
In₂Se₃ 6 wt. % Mn. Temperature dependences of the conductivities across (σ⊥C) and along
(σ||C) the crystallographic c axis were measured in the range of 80 to 400 K. From the
anisotropy σ⊥C/σ||C of conductivity temperature dependences of the energy barrier value
ΔЕδ between the layers were calculated for the crystals under investigations.
|
| first_indexed | 2025-12-07T19:27:37Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118878 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:27:37Z |
| publishDate | 2009 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kaminskii, V.M. Kovalyuk, Z.D. Zaslonkin, A.V. Ivanov, V.I. 2017-05-31T19:53:48Z 2017-05-31T19:53:48Z 2009 Structure and electrical properties of In₂Se₃Mn layered crystals / V.M. Kaminskii, Z.D. Kovalyuk, A.V. Zaslonkin, and V.I. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 290-293. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 72.20.Dp, 72.20.-i, 81.10.Fq https://nasplib.isofts.kiev.ua/handle/123456789/118878 Investigations of the crystalline structure and electrical properties of
 In₂Se₃ 1 wt. %Mn and In₂Se₃ 6 wt. % Mn crystals have been carried out. We have
 found formation of a substitutional solid solution for In₂Se₃ 1 wt. %Mn single crystals as
 well as existence of two phases (In₂Se₃ and MnIn₂Se₄) in polycrystalline ingots
 In₂Se₃ 6 wt. % Mn. Temperature dependences of the conductivities across (σ⊥C) and along
 (σ||C) the crystallographic c axis were measured in the range of 80 to 400 K. From the
 anisotropy σ⊥C/σ||C of conductivity temperature dependences of the energy barrier value
 ΔЕδ between the layers were calculated for the crystals under investigations. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Structure and electrical properties of In₂Se₃Mn layered crystals Article published earlier |
| spellingShingle | Structure and electrical properties of In₂Se₃Mn layered crystals Kaminskii, V.M. Kovalyuk, Z.D. Zaslonkin, A.V. Ivanov, V.I. |
| title | Structure and electrical properties of In₂Se₃Mn layered crystals |
| title_full | Structure and electrical properties of In₂Se₃Mn layered crystals |
| title_fullStr | Structure and electrical properties of In₂Se₃Mn layered crystals |
| title_full_unstemmed | Structure and electrical properties of In₂Se₃Mn layered crystals |
| title_short | Structure and electrical properties of In₂Se₃Mn layered crystals |
| title_sort | structure and electrical properties of in₂se₃mn layered crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118878 |
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