Structure and electrical properties of In₂Se₃Mn layered crystals

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2009
• Main Authors: Kaminskii, V.M., Kovalyuk, Z.D., Zaslonkin, A.V., Ivanov, V.I.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118878
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Structure and electrical properties of In₂Se₃Mn layered crystals / V.M. Kaminskii, Z.D. Kovalyuk, A.V. Zaslonkin, and V.I. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 290-293. — Бібліогр.: 11 назв. — англ.

Investigations of the crystalline structure and electrical properties of
 In₂Se₃ 1 wt. %Mn and In₂Se₃ 6 wt. % Mn crystals have been carried out. We have
 found formation of a substitutional solid solution for In₂Se₃ 1 wt. %Mn single crystals as
 well as existence of two ph...