Parameters of the energy spectrum for holes in CuInSe₂
This paper reports the coefficients Ca,b for the k-linear term in dispersion
 relation E(k) for holes of the upper valence bands Г⁻₆ and Г⁺₇ in p-CuInSe₂ crystals. We
 also obtained the tensor components for the carrier effective masses, in all three valence sub-bands of the model...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2009 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118881 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Parameters of the energy spectrum for holes in CuInSe₂ / P.М. Gorley, I.V. Prokopenko, О.О. Galochkinа, P.P. Horley, Yu.V. Vorobiev, J. Gonzalez-Hernandez // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 302-308. — Бібліогр.: 30 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862686845294346240 |
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| author | Gorley, P.М. Prokopenko, I.V. Galochkinа, О.О. Horley, P.P. Vorobiev, Yu.V. González-Hernández, J. |
| author_facet | Gorley, P.М. Prokopenko, I.V. Galochkinа, О.О. Horley, P.P. Vorobiev, Yu.V. González-Hernández, J. |
| citation_txt | Parameters of the energy spectrum for holes in CuInSe₂ / P.М. Gorley, I.V. Prokopenko, О.О. Galochkinа, P.P. Horley, Yu.V. Vorobiev, J. Gonzalez-Hernandez // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 302-308. — Бібліогр.: 30 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | This paper reports the coefficients Ca,b for the k-linear term in dispersion
relation E(k) for holes of the upper valence bands Г⁻₆ and Г⁺₇ in p-CuInSe₂ crystals. We
also obtained the tensor components for the carrier effective masses, in all three valence sub-bands of the model semiconductor. It was shown that the energy spectrum parameters for holes in CuInSe₂ allow successful explanation for the anisotropy of tensor
components describing the interband light absorption coefficient and the published data
for the temperature variation of the Hall coefficient, total Hall mobility and thermal
voltage within the temperature range 100 K ≤ T ≤ 350 K.
|
| first_indexed | 2025-12-07T16:04:56Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118881 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:04:56Z |
| publishDate | 2009 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Gorley, P.М. Prokopenko, I.V. Galochkinа, О.О. Horley, P.P. Vorobiev, Yu.V. González-Hernández, J. 2017-05-31T19:58:09Z 2017-05-31T19:58:09Z 2009 Parameters of the energy spectrum for holes in CuInSe₂ / P.М. Gorley, I.V. Prokopenko, О.О. Galochkinа, P.P. Horley, Yu.V. Vorobiev, J. Gonzalez-Hernandez // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 302-308. — Бібліогр.: 30 назв. — англ. 1560-8034 PACS 61.50.Ah 71.20.-b, 73.50.Lw https://nasplib.isofts.kiev.ua/handle/123456789/118881 This paper reports the coefficients Ca,b for the k-linear term in dispersion
 relation E(k) for holes of the upper valence bands Г⁻₆ and Г⁺₇ in p-CuInSe₂ crystals. We
 also obtained the tensor components for the carrier effective masses, in all three valence sub-bands of the model semiconductor. It was shown that the energy spectrum parameters for holes in CuInSe₂ allow successful explanation for the anisotropy of tensor
 components describing the interband light absorption coefficient and the published data
 for the temperature variation of the Hall coefficient, total Hall mobility and thermal
 voltage within the temperature range 100 K ≤ T ≤ 350 K. The paper was partially supported by the budget
 financing of the Ministry for Education and Science of
 Ukraine and research projects (2009-2011 years) at the
 Department of Electronics and Energy Engineering and
 Scientific and Educational Center “Material Science of
 Semiconductors and Energy-Efficient Technologies” at
 the Chernivtsi National University. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Parameters of the energy spectrum for holes in CuInSe₂ Article published earlier |
| spellingShingle | Parameters of the energy spectrum for holes in CuInSe₂ Gorley, P.М. Prokopenko, I.V. Galochkinа, О.О. Horley, P.P. Vorobiev, Yu.V. González-Hernández, J. |
| title | Parameters of the energy spectrum for holes in CuInSe₂ |
| title_full | Parameters of the energy spectrum for holes in CuInSe₂ |
| title_fullStr | Parameters of the energy spectrum for holes in CuInSe₂ |
| title_full_unstemmed | Parameters of the energy spectrum for holes in CuInSe₂ |
| title_short | Parameters of the energy spectrum for holes in CuInSe₂ |
| title_sort | parameters of the energy spectrum for holes in cuinse₂ |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118881 |
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