A neural computation to study the scaling capability of the undoped DG MOSFET
The DG MOSFET is one of the most promising candidates for further CMOS
 scaling beyond the year of 2010. It will be scaled down to various degrees upon a wide
 range of system/circuit requirements (such as high-performance, low standby power and
 low operating power). The key...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2008 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118884 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | A neural computation to study the scaling capability of the undoped DG MOSFET / F. Djeffal, S. Guessasma, A. Benhaya, T. Bendib // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 196-202. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862691725225492480 |
|---|---|
| author | Djeffal, F. Guessasma, S. Benhaya, A. Bendib, T. |
| author_facet | Djeffal, F. Guessasma, S. Benhaya, A. Bendib, T. |
| citation_txt | A neural computation to study the scaling capability of the undoped DG MOSFET / F. Djeffal, S. Guessasma, A. Benhaya, T. Bendib // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 196-202. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The DG MOSFET is one of the most promising candidates for further CMOS
scaling beyond the year of 2010. It will be scaled down to various degrees upon a wide
range of system/circuit requirements (such as high-performance, low standby power and
low operating power). The key electrical parameter of the DG MOSFET is the
subthreshold swing (S). In this paper, we present the applicability of the artificial neural
network for the study of the scaling capability of the undoped DG MOSFET. The latter is
based on the development of a semi-analytical model of the subthreshold swing (S) using
the Finite Elements Method (FEM). Our results are discussed in order to draw some
useful information about the ULSI technology.
|
| first_indexed | 2025-12-07T16:16:52Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118884 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:16:52Z |
| publishDate | 2008 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Djeffal, F. Guessasma, S. Benhaya, A. Bendib, T. 2017-06-01T04:04:50Z 2017-06-01T04:04:50Z 2008 A neural computation to study the scaling capability of the undoped DG MOSFET / F. Djeffal, S. Guessasma, A. Benhaya, T. Bendib // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 196-202. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 85.30.-z, 07.05.Mh, 68.65.-k, 85.35.-p https://nasplib.isofts.kiev.ua/handle/123456789/118884 The DG MOSFET is one of the most promising candidates for further CMOS
 scaling beyond the year of 2010. It will be scaled down to various degrees upon a wide
 range of system/circuit requirements (such as high-performance, low standby power and
 low operating power). The key electrical parameter of the DG MOSFET is the
 subthreshold swing (S). In this paper, we present the applicability of the artificial neural
 network for the study of the scaling capability of the undoped DG MOSFET. The latter is
 based on the development of a semi-analytical model of the subthreshold swing (S) using
 the Finite Elements Method (FEM). Our results are discussed in order to draw some
 useful information about the ULSI technology. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics A neural computation to study the scaling capability of the undoped DG MOSFET Article published earlier |
| spellingShingle | A neural computation to study the scaling capability of the undoped DG MOSFET Djeffal, F. Guessasma, S. Benhaya, A. Bendib, T. |
| title | A neural computation to study the scaling capability of the undoped DG MOSFET |
| title_full | A neural computation to study the scaling capability of the undoped DG MOSFET |
| title_fullStr | A neural computation to study the scaling capability of the undoped DG MOSFET |
| title_full_unstemmed | A neural computation to study the scaling capability of the undoped DG MOSFET |
| title_short | A neural computation to study the scaling capability of the undoped DG MOSFET |
| title_sort | neural computation to study the scaling capability of the undoped dg mosfet |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118884 |
| work_keys_str_mv | AT djeffalf aneuralcomputationtostudythescalingcapabilityoftheundopeddgmosfet AT guessasmas aneuralcomputationtostudythescalingcapabilityoftheundopeddgmosfet AT benhayaa aneuralcomputationtostudythescalingcapabilityoftheundopeddgmosfet AT bendibt aneuralcomputationtostudythescalingcapabilityoftheundopeddgmosfet AT djeffalf neuralcomputationtostudythescalingcapabilityoftheundopeddgmosfet AT guessasmas neuralcomputationtostudythescalingcapabilityoftheundopeddgmosfet AT benhayaa neuralcomputationtostudythescalingcapabilityoftheundopeddgmosfet AT bendibt neuralcomputationtostudythescalingcapabilityoftheundopeddgmosfet |