A neural computation to study the scaling capability of the undoped DG MOSFET

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2008
• Main Authors: Djeffal, F., Guessasma, S., Benhaya, A., Bendib, T.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118884
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: A neural computation to study the scaling capability of the undoped DG MOSFET / F. Djeffal, S. Guessasma, A. Benhaya, T. Bendib // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 196-202. — Бібліогр.: 11 назв. — англ.

The DG MOSFET is one of the most promising candidates for further CMOS scaling beyond the year of 2010. It will be scaled down to various degrees upon a wide range of system/circuit requirements (such as high-performance, low standby power and low operating power). The key electrical parameter of...