Buchumschlag

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures

We investigated thermal stability of Au–TiBx (ZrBx) barrier contacts, as well as ohmic contacts with a TiBx diffusion barrier to n-Si (GaAs, InP, GaP, GaN, SiC). The electrophysical measurements of Schottky barrier diodes and ohmic contacts were performed both before and a...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2008
Hauptverfasser:	Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Sheremet, V.N.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/118902
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures / A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 209-216. — Бібліогр.: 39 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine

Ähnliche Einträge

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
von: Boltovets, N.S., et al.
Veröffentlicht: (2004)

On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes
von: Belyaev, A.E., et al.
Veröffentlicht: (2007)

Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
von: Konakova, R.V., et al.
Veröffentlicht: (2001)

Schottky-barrier Au–TiBx–n-GaN contacts
von: Ya. Kudryk
Veröffentlicht: (2015)

Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs
von: Venger, E.F., et al.
Veröffentlicht: (1999)

Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures
von: Abdizhaliev, S.K., et al.
Veröffentlicht: (2003)

Контакти з бар’єром Шотткі Au–TiBx–n-GaN
von: Кудрик, Р.Я.
Veröffentlicht: (2015)

Technology and experimental studies of contacts for microwave diodes based on interstitial phases
von: Boltovets, N.S., et al.
Veröffentlicht: (2001)

Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts
von: Belyaev, A.E., et al.
Veröffentlicht: (2010)

Ohmic contacts based on Pd to indium phosphide Gunn diodes
von: Belyaev, A.E., et al.
Veröffentlicht: (2015)

Ohmic contacts based on Pd to indium phosphide Gunn diodes
von: A. E. Belyaev, et al.
Veröffentlicht: (2015)

Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes
von: Kudryk, Ya.Ya., et al.
Veröffentlicht: (2019)

Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
von: Belyaev, A.E., et al.
Veröffentlicht: (2011)

Development of high-stable contact systems to gallium nitride microwave diodes
von: Belyaev, A.E., et al.
Veröffentlicht: (2007)

Quantization of the magnetic moment in CdBxF2–x/p-CdF2–QW/CdBxF2–x nanosandwiches
von: N. T. Bagraev, et al.
Veröffentlicht: (2014)

Квантование магнитного момента в наносандвичах CdBxF₂₋x/p-CdF₂₋QW/CdBxF₂₋x
von: Баграев, Н.Т., et al.
Veröffentlicht: (2014)

New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis
von: Arsentyev, I.N., et al.
Veröffentlicht: (2005)

Role of dislocations in formation of ohmic contacts to heavily doped n-Si
von: Belyaev, A.E., et al.
Veröffentlicht: (2013)

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes
von: Romanets, P.M., et al.
Veröffentlicht: (2016)

Method for data processing in application to ohmic contacts
von: Belyaev, A.E., et al.
Veröffentlicht: (2019)

Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures
von: Boltovets, N.S., et al.
Veröffentlicht: (2006)

Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
von: Boltovets, M.S., et al.
Veröffentlicht: (2010)

Temperature dependence of contact resistance of Au Ti Pd2Si n+-Si ohmic contacts
von: A. E. Belyaev, et al.
Veröffentlicht: (2010)

Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes
von: Ya. Ya. Kudryk, et al.
Veröffentlicht: (2019)

Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
von: Belyaev, A.E., et al.
Veröffentlicht: (2013)

The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts
von: Belyaev, A.E., et al.
Veröffentlicht: (2010)

Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
von: M. S. Boltovets, et al.
Veröffentlicht: (2010)

Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN
von: Sheremet, V.N.
Veröffentlicht: (2013)

Method for data processing in application to ohmic contacts
von: A. E. Belyaev, et al.
Veröffentlicht: (2019)

Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
von: A. E. Belyaev, et al.
Veröffentlicht: (2011)

On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step
von: Sachenko, A.V., et al.
Veröffentlicht: (2014)

Metrological aspects of researching the specific contact resistivity of ohmic contacts by using the four-contact method
von: Sheremet, V.N.
Veröffentlicht: (2014)

Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices
von: Ivanov, V.N., et al.
Veröffentlicht: (2003)

Raman spectroscopy of BN and BxNyCz structures formed in an optical furnace without catalysts
von: L. L. Sartinska, et al.
Veröffentlicht: (2010)

Raman spectroscopy of BN and BxNyCz structures formed in an optical furnace without catalysts
von: Sartinska, L.L., et al.
Veröffentlicht: (2010)

The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts
von: A. E. Belyaev, et al.
Veröffentlicht: (2010)

Mechanisms of contact resistance formation in ohmic contacts with high dislocation density (review)
von: A. V. Sachenko, et al.
Veröffentlicht: (2013)

Cyclic Period Changes of beta Lyrae-type Eclipsing Variable Stars KR Cyg, V382 Cyg and BX And
von: D. E. Tvardovskyi, et al.
Veröffentlicht: (2015)

Cyclic Period Changes of β Lyrae-type Eclipsing Variable Stars KR Cyg, V382 Cyg and BX And
von: Tvardovskyi, D.E., et al.
Veröffentlicht: (2015)

Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
von: Belyaev, A.E., et al.
Veröffentlicht: (2015)