Theoretical consideration of charge transport through the nanoindentor/GaAs junction

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2008
• Автори: Kosogor, A.O., Nowak, R., Chrobak, D., L’vov, V.A.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118903
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Theoretical consideration of charge transport through the nanoindentor/GaAs junction / A. O. Kosogor, R. Nowak, D. Chrobak, V. A. L'vov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 217-220. — Бібліогр.: 6 назв. — англ.

The process of indentation of GaAs single crystal by the conductive
 nanoindentor has been analyzed theoretically. The diode formed by the nanoindentor tip
 and small area of GaAs platelet has been considered. The evolution of local mechanical
 stress during the nanoindentation cycle and an appropriate transformation of electric
 potential difference inherent in tip/GaAs junction are described qualitatively. The nonmonotone
 variation of the mechanical stress and electric potential difference during the
 indentation cycle has been disclosed. The current spike experimentally registered in the
 moment of abrupt penetration of indentor tip into the GaAs platelet has been attributed to
 the non-monotone variation of potential difference during the indentation cycle.