Theoretical consideration of charge transport through the nanoindentor/GaAs junction
The process of indentation of GaAs single crystal by the conductive
 nanoindentor has been analyzed theoretically. The diode formed by the nanoindentor tip
 and small area of GaAs platelet has been considered. The evolution of local mechanical
 stress during the nanoindentati...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2008 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118903 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Theoretical consideration of charge transport through the nanoindentor/GaAs junction / A. O. Kosogor, R. Nowak, D. Chrobak, V. A. L'vov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 217-220. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862733104358096896 |
|---|---|
| author | Kosogor, A.O. Nowak, R. Chrobak, D. L’vov, V.A. |
| author_facet | Kosogor, A.O. Nowak, R. Chrobak, D. L’vov, V.A. |
| citation_txt | Theoretical consideration of charge transport through the nanoindentor/GaAs junction / A. O. Kosogor, R. Nowak, D. Chrobak, V. A. L'vov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 217-220. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The process of indentation of GaAs single crystal by the conductive
nanoindentor has been analyzed theoretically. The diode formed by the nanoindentor tip
and small area of GaAs platelet has been considered. The evolution of local mechanical
stress during the nanoindentation cycle and an appropriate transformation of electric
potential difference inherent in tip/GaAs junction are described qualitatively. The nonmonotone
variation of the mechanical stress and electric potential difference during the
indentation cycle has been disclosed. The current spike experimentally registered in the
moment of abrupt penetration of indentor tip into the GaAs platelet has been attributed to
the non-monotone variation of potential difference during the indentation cycle.
|
| first_indexed | 2025-12-07T19:36:22Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118903 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:36:22Z |
| publishDate | 2008 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kosogor, A.O. Nowak, R. Chrobak, D. L’vov, V.A. 2017-06-01T04:38:15Z 2017-06-01T04:38:15Z 2008 Theoretical consideration of charge transport through the nanoindentor/GaAs junction / A. O. Kosogor, R. Nowak, D. Chrobak, V. A. L'vov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 217-220. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 07.10.Pz, 72.80.Ey, 73.40.-c, 62.40.+i https://nasplib.isofts.kiev.ua/handle/123456789/118903 The process of indentation of GaAs single crystal by the conductive
 nanoindentor has been analyzed theoretically. The diode formed by the nanoindentor tip
 and small area of GaAs platelet has been considered. The evolution of local mechanical
 stress during the nanoindentation cycle and an appropriate transformation of electric
 potential difference inherent in tip/GaAs junction are described qualitatively. The nonmonotone
 variation of the mechanical stress and electric potential difference during the
 indentation cycle has been disclosed. The current spike experimentally registered in the
 moment of abrupt penetration of indentor tip into the GaAs platelet has been attributed to
 the non-monotone variation of potential difference during the indentation cycle. The authors are grateful to Dr. A.G. Shkavro and
 Dr. V.V. Ilchenko for the helpful discussion. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Theoretical consideration of charge transport through the nanoindentor/GaAs junction Article published earlier |
| spellingShingle | Theoretical consideration of charge transport through the nanoindentor/GaAs junction Kosogor, A.O. Nowak, R. Chrobak, D. L’vov, V.A. |
| title | Theoretical consideration of charge transport through the nanoindentor/GaAs junction |
| title_full | Theoretical consideration of charge transport through the nanoindentor/GaAs junction |
| title_fullStr | Theoretical consideration of charge transport through the nanoindentor/GaAs junction |
| title_full_unstemmed | Theoretical consideration of charge transport through the nanoindentor/GaAs junction |
| title_short | Theoretical consideration of charge transport through the nanoindentor/GaAs junction |
| title_sort | theoretical consideration of charge transport through the nanoindentor/gaas junction |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118903 |
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