Cover Image

Theoretical consideration of charge transport through the nanoindentor/GaAs junction

The process of indentation of GaAs single crystal by the conductive
 nanoindentor has been analyzed theoretically. The diode formed by the nanoindentor tip
 and small area of GaAs platelet has been considered. The evolution of local mechanical
 stress during the nanoindentati...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2008
Main Authors: Kosogor, A.O., Nowak, R., Chrobak, D., L’vov, V.A.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118903
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Theoretical consideration of charge transport through the nanoindentor/GaAs junction / A. O. Kosogor, R. Nowak, D. Chrobak, V. A. L'vov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 217-220. — Бібліогр.: 6 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine

Similar Items

Similar Items