Coulomb blockade of spin-dependent shuttling

We show that nanomechanical shuttling of single electrons may enable qualitatively new functionality if spin-polarized electrons are injected into a nanoelectromechanical single-electron tunneling (NEM-SET) device. This is due to the combined effects of spin-dependent electron tunneling and Coulomb...

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Published in:Физика низких температур
Date:2013
Main Authors: Park, Hee Chul, Kadigrobov, A.M., Shekhter, R.I., Jonson, M.
Format: Article
Language:English
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2013
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118922
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Coulomb blockade of spin-dependent shuttling / Hee Chul Park, A.M. Kadigrobov, R.I. Shekhter, M. Jonson // Физика низких температур. — 2013. — Т. 39, № 12. — С. 1373–1380. — Бібліогр.: 22 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:We show that nanomechanical shuttling of single electrons may enable qualitatively new functionality if spin-polarized electrons are injected into a nanoelectromechanical single-electron tunneling (NEM-SET) device. This is due to the combined effects of spin-dependent electron tunneling and Coulomb blockade of tunneling, which are phenomena that occur in certain magnetic NEM-SET devices. Two effects are predicted to occur in such structures. The first is a reentrant shuttle instability, by which we mean the sequential appearance, disappearance and again the appearance of a shuttle instability as the driving voltage is increased (or the mechanical dissipation is diminished). The second effect is an enhanced spin polarization of the nanomechanically assisted current flow.
ISSN:0132-6414