Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2008
• Main Authors: Primachenko, V.E., Kirillova, S.I., Chernobay, V.A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119046
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it / V.E. Primachenko, S.I. Kirillova, V.A. Chernobay // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 266-285. — Бібліогр.: 69 назв. — англ.

This overview deals with original works of authors as well as with works by
 native and foreign authors, which are devoted to this or close topics. It is written with
 account of the modern state of the problem, to solve which a great amount of successful
 work was made by Academician of NAS of Ukraine O.V. Snitko. Considered in this
 paper are the essence of the phenomenon of non-equilibrium depletion with majority
 charge carriers that takes place in the field effect in silicon and a set of new phenomena
 that were revealed by the authors when investigating this effect. Besides, analyzed in
 detail are the processes of acceleration inherent to relaxation of the non-equilibrium
 depletion in strong electric fields (Es = 3·10³
 – 5·10⁵
 V/cm) at silicon surface being in
 various physical-and-chemical states. It is noted that the Franz-Keldysh or Frenkel
 effects for local centers play the main role in acceleration of relaxation with growing Es
 at the silicon surface. In this case, an essential role belongs to electron-phonon
 interaction of the charge carrier at the local center with continuum phonons around this
 center.