Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it
This overview deals with original works of authors as well as with works by native and foreign authors, which are devoted to this or close topics. It is written with account of the modern state of the problem, to solve which a great amount of successful work was made by Academician of NAS of Ukra...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2008 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119046 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it / V.E. Primachenko, S.I. Kirillova, V.A. Chernobay // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 266-285. — Бібліогр.: 69 назв. — англ. |
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nasplib_isofts_kiev_ua-123456789-119046 |
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Primachenko, V.E. Kirillova, S.I. Chernobay, V.A. 2017-06-03T04:41:29Z 2017-06-03T04:41:29Z 2008 Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it / V.E. Primachenko, S.I. Kirillova, V.A. Chernobay // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 266-285. — Бібліогр.: 69 назв. — англ. 1560-8034 PACS 68.35.-p, 73.20.-r https://nasplib.isofts.kiev.ua/handle/123456789/119046 This overview deals with original works of authors as well as with works by native and foreign authors, which are devoted to this or close topics. It is written with account of the modern state of the problem, to solve which a great amount of successful work was made by Academician of NAS of Ukraine O.V. Snitko. Considered in this paper are the essence of the phenomenon of non-equilibrium depletion with majority charge carriers that takes place in the field effect in silicon and a set of new phenomena that were revealed by the authors when investigating this effect. Besides, analyzed in detail are the processes of acceleration inherent to relaxation of the non-equilibrium depletion in strong electric fields (Es = 3·10³ – 5·10⁵ V/cm) at silicon surface being in various physical-and-chemical states. It is noted that the Franz-Keldysh or Frenkel effects for local centers play the main role in acceleration of relaxation with growing Es at the silicon surface. In this case, an essential role belongs to electron-phonon interaction of the charge carrier at the local center with continuum phonons around this center. Dedicated to the 80th anniversary of Academician O.V. Snitko en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it |
| spellingShingle |
Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it Primachenko, V.E. Kirillova, S.I. Chernobay, V.A. |
| title_short |
Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it |
| title_full |
Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it |
| title_fullStr |
Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it |
| title_full_unstemmed |
Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it |
| title_sort |
relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it |
| author |
Primachenko, V.E. Kirillova, S.I. Chernobay, V.A. |
| author_facet |
Primachenko, V.E. Kirillova, S.I. Chernobay, V.A. |
| publishDate |
2008 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
This overview deals with original works of authors as well as with works by
native and foreign authors, which are devoted to this or close topics. It is written with
account of the modern state of the problem, to solve which a great amount of successful
work was made by Academician of NAS of Ukraine O.V. Snitko. Considered in this
paper are the essence of the phenomenon of non-equilibrium depletion with majority
charge carriers that takes place in the field effect in silicon and a set of new phenomena
that were revealed by the authors when investigating this effect. Besides, analyzed in
detail are the processes of acceleration inherent to relaxation of the non-equilibrium
depletion in strong electric fields (Es = 3·10³
– 5·10⁵
V/cm) at silicon surface being in
various physical-and-chemical states. It is noted that the Franz-Keldysh or Frenkel
effects for local centers play the main role in acceleration of relaxation with growing Es
at the silicon surface. In this case, an essential role belongs to electron-phonon
interaction of the charge carrier at the local center with continuum phonons around this
center.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119046 |
| citation_txt |
Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it / V.E. Primachenko, S.I. Kirillova, V.A. Chernobay // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 266-285. — Бібліогр.: 69 назв. — англ. |
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2025-12-07T13:08:57Z |
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2025-12-07T13:08:57Z |
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