Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2008
• Автори: Primachenko, V.E., Kirillova, S.I., Chernobay, V.A.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/119046
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it / V.E. Primachenko, S.I. Kirillova, V.A. Chernobay // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 266-285. — Бібліогр.: 69 назв. — англ.

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