Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2008
• Hauptverfasser: Primachenko, V.E., Kirillova, S.I., Chernobay, V.A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119046
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it / V.E. Primachenko, S.I. Kirillova, V.A. Chernobay // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 266-285. — Бібліогр.: 69 назв. — англ.

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