Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2008
• Main Authors: Primachenko, V.E., Kirillova, S.I., Chernobay, V.A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119046
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it / V.E. Primachenko, S.I. Kirillova, V.A. Chernobay // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 266-285. — Бібліогр.: 69 назв. — англ.

This overview deals with original works of authors as well as with works by native and foreign authors, which are devoted to this or close topics. It is written with account of the modern state of the problem, to solve which a great amount of successful work was made by Academician of NAS of Ukra...